Thickness Effect on the Solid-State Reaction of a Ni/GaAs System
Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetal...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/15/2633 |
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| author | Selma Rabhi Nouredine Oueldna Carine Perrin-Pellegrino Alain Portavoce Karol Kalna Mohamed Cherif Benoudia Khalid Hoummada |
| author_facet | Selma Rabhi Nouredine Oueldna Carine Perrin-Pellegrino Alain Portavoce Karol Kalna Mohamed Cherif Benoudia Khalid Hoummada |
| author_sort | Selma Rabhi |
| collection | DOAJ |
| description | Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetallic phases was investigated using in situ and ex situ XRD, pole figures, and atom probe tomography (APT). The results indicate that the 20 nm-thick Ni film exhibits an epitaxial relation with the GaAs substrate, which is (001) Ni//(001) GaAs and [111] Ni//[110] GaAs after deposition. Increasing the film’s thickness results in a change of the Ni film’s texture. This difference has an impact on the formation temperature of Ni<sub>3</sub>GaAs. This temperature decreases simultaneously with the thickness increase. This is due to the coherent/incoherent nature of the initial Ni/GaAs interface. The Ni<sub>3</sub>GaAs phase decomposes into the binary and ternary compounds xNiAs and Ni<sub>3−x</sub>GaAs<sub>1−x</sub> at about 400 °C. Similarly to Ni<sub>3</sub>GaAs, the decomposition temperature of the second phase also depends on the initial thickness of the Ni layer. |
| first_indexed | 2024-03-09T12:18:35Z |
| format | Article |
| id | doaj.art-2358297842a84a2f9468e36f6a48a4b6 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T12:18:35Z |
| publishDate | 2022-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-2358297842a84a2f9468e36f6a48a4b62023-11-30T22:42:44ZengMDPI AGNanomaterials2079-49912022-07-011215263310.3390/nano12152633Thickness Effect on the Solid-State Reaction of a Ni/GaAs SystemSelma Rabhi0Nouredine Oueldna1Carine Perrin-Pellegrino2Alain Portavoce3Karol Kalna4Mohamed Cherif Benoudia5Khalid Hoummada6IM2NP, CNRS UMR 7334, Aix-Marseille University, 13397 Marseille, FranceIM2NP, CNRS UMR 7334, Aix-Marseille University, 13397 Marseille, FranceIM2NP, CNRS UMR 7334, Aix-Marseille University, 13397 Marseille, FranceIM2NP, CNRS UMR 7334, Aix-Marseille University, 13397 Marseille, FranceNanoelectronics Devices Computational Group, Swansea University, Swansea SA1 8EN, UKL3M, Ecole Nationale Supérieure des Mines et de la Métallurgie, Annaba, Sidi Amar 23000, AlgeriaIM2NP, CNRS UMR 7334, Aix-Marseille University, 13397 Marseille, FranceNi thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetallic phases was investigated using in situ and ex situ XRD, pole figures, and atom probe tomography (APT). The results indicate that the 20 nm-thick Ni film exhibits an epitaxial relation with the GaAs substrate, which is (001) Ni//(001) GaAs and [111] Ni//[110] GaAs after deposition. Increasing the film’s thickness results in a change of the Ni film’s texture. This difference has an impact on the formation temperature of Ni<sub>3</sub>GaAs. This temperature decreases simultaneously with the thickness increase. This is due to the coherent/incoherent nature of the initial Ni/GaAs interface. The Ni<sub>3</sub>GaAs phase decomposes into the binary and ternary compounds xNiAs and Ni<sub>3−x</sub>GaAs<sub>1−x</sub> at about 400 °C. Similarly to Ni<sub>3</sub>GaAs, the decomposition temperature of the second phase also depends on the initial thickness of the Ni layer.https://www.mdpi.com/2079-4991/12/15/2633solid-state reactionthicknessNi-thin filmsIII-IV semi-conductorsin situ X-ray diffractionintermetallic growth |
| spellingShingle | Selma Rabhi Nouredine Oueldna Carine Perrin-Pellegrino Alain Portavoce Karol Kalna Mohamed Cherif Benoudia Khalid Hoummada Thickness Effect on the Solid-State Reaction of a Ni/GaAs System Nanomaterials solid-state reaction thickness Ni-thin films III-IV semi-conductors in situ X-ray diffraction intermetallic growth |
| title | Thickness Effect on the Solid-State Reaction of a Ni/GaAs System |
| title_full | Thickness Effect on the Solid-State Reaction of a Ni/GaAs System |
| title_fullStr | Thickness Effect on the Solid-State Reaction of a Ni/GaAs System |
| title_full_unstemmed | Thickness Effect on the Solid-State Reaction of a Ni/GaAs System |
| title_short | Thickness Effect on the Solid-State Reaction of a Ni/GaAs System |
| title_sort | thickness effect on the solid state reaction of a ni gaas system |
| topic | solid-state reaction thickness Ni-thin films III-IV semi-conductors in situ X-ray diffraction intermetallic growth |
| url | https://www.mdpi.com/2079-4991/12/15/2633 |
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