Large-scale synthesis of two-dimensional indium telluride films for broadband photodetectors
2D III-VI semiconductors have emerged as promising materials for optoelectronic devices due to their tunable bandgaps, efficient light absorption and high carrier mobility. Among III-VI group, 2D indium telluride (InTe) has been studied very little compared with its well-known congeners such as InSe...
Hlavní autoři: | , , , , , , , |
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Médium: | Článek |
Jazyk: | English |
Vydáno: |
Elsevier
2023-09-01
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Edice: | Materials & Design |
Témata: | |
On-line přístup: | http://www.sciencedirect.com/science/article/pii/S0264127523006330 |