Large-scale synthesis of two-dimensional indium telluride films for broadband photodetectors

2D III-VI semiconductors have emerged as promising materials for optoelectronic devices due to their tunable bandgaps, efficient light absorption and high carrier mobility. Among III-VI group, 2D indium telluride (InTe) has been studied very little compared with its well-known congeners such as InSe...

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Detalles Bibliográficos
Autores principales: Zhibin Yang, Jiaxing Guo, Haoran Li, Xiaona Du, Yanan Zhao, Haisheng Chen, Wenwen Chen, Yang Zhang
Formato: Artículo
Lenguaje:English
Publicado: Elsevier 2023-09-01
Colección:Materials & Design
Materias:
Acceso en línea:http://www.sciencedirect.com/science/article/pii/S0264127523006330