Large-scale synthesis of two-dimensional indium telluride films for broadband photodetectors

2D III-VI semiconductors have emerged as promising materials for optoelectronic devices due to their tunable bandgaps, efficient light absorption and high carrier mobility. Among III-VI group, 2D indium telluride (InTe) has been studied very little compared with its well-known congeners such as InSe...

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מידע ביבליוגרפי
Main Authors:	Zhibin Yang, Jiaxing Guo, Haoran Li, Xiaona Du, Yanan Zhao, Haisheng Chen, Wenwen Chen, Yang Zhang
פורמט:	Article
שפה:	English
יצא לאור:	Elsevier 2023-09-01
סדרה:	Materials & Design
נושאים:	2D InTe Large-scale synthesis Broadband photodetector Layer-dependent photoresponse Pulsed laser deposition
גישה מקוונת:	http://www.sciencedirect.com/science/article/pii/S0264127523006330

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http://www.sciencedirect.com/science/article/pii/S0264127523006330

Large-scale synthesis of two-dimensional indium telluride films for broadband photodetectors

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