Large-scale synthesis of two-dimensional indium telluride films for broadband photodetectors
2D III-VI semiconductors have emerged as promising materials for optoelectronic devices due to their tunable bandgaps, efficient light absorption and high carrier mobility. Among III-VI group, 2D indium telluride (InTe) has been studied very little compared with its well-known congeners such as InSe...
| Những tác giả chính: | , , , , , , , |
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| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
Elsevier
2023-09-01
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| Loạt: | Materials & Design |
| Những chủ đề: | |
| Truy cập trực tuyến: | http://www.sciencedirect.com/science/article/pii/S0264127523006330 |