Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters
This work presents a study of photoconductive (PC) terahertz (THz) emitters based upon varied bow-tie (BT) antenna structures on the semi-insulating (SI) forms of GaAs and InP. The BT antennas have electrodes in the form of a Sharp BT, a Broad BT, an Asymmetric BT, a Blunted BT, and a Doubled BT. Th...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-04-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/21/9/3131 |
| _version_ | 1797535614048927744 |
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| author | Salman Alfihed Ian G. Foulds Jonathan F. Holzman |
| author_facet | Salman Alfihed Ian G. Foulds Jonathan F. Holzman |
| author_sort | Salman Alfihed |
| collection | DOAJ |
| description | This work presents a study of photoconductive (PC) terahertz (THz) emitters based upon varied bow-tie (BT) antenna structures on the semi-insulating (SI) forms of GaAs and InP. The BT antennas have electrodes in the form of a Sharp BT, a Broad BT, an Asymmetric BT, a Blunted BT, and a Doubled BT. The study explores the main features of PC THz emitters for spectroscopic studies and sensors application in terms of THz field amplitude and spectral bandwidth. The emitters’ performance levels are found to depend strongly upon the PC material and antenna structure. The SI-InP emitters display lower THz field amplitude and narrower bandwidth compared to the SI-GaAs emitters with the same structure (and dimensions). The characterized Doubled BT structure yields a higher THz field amplitude, while the characterized Asymmetric BT structure with flat edges yields a higher bandwidth in comparison to the sharp-edged structures. This knowledge on the PC THz emitter characteristics, in terms of material and structure, can play a key role in future implementations and applications of THz sensor technology. |
| first_indexed | 2024-03-10T11:46:59Z |
| format | Article |
| id | doaj.art-2394590b207541d59da8c45fa2afedc0 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T11:46:59Z |
| publishDate | 2021-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-2394590b207541d59da8c45fa2afedc02023-11-21T17:58:05ZengMDPI AGSensors1424-82202021-04-01219313110.3390/s21093131Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz EmittersSalman Alfihed0Ian G. Foulds1Jonathan F. Holzman2School of Engineering, University of British Columbia (UBC), Kelowna, BC V1V 1V7, CanadaSchool of Engineering, University of British Columbia (UBC), Kelowna, BC V1V 1V7, CanadaSchool of Engineering, University of British Columbia (UBC), Kelowna, BC V1V 1V7, CanadaThis work presents a study of photoconductive (PC) terahertz (THz) emitters based upon varied bow-tie (BT) antenna structures on the semi-insulating (SI) forms of GaAs and InP. The BT antennas have electrodes in the form of a Sharp BT, a Broad BT, an Asymmetric BT, a Blunted BT, and a Doubled BT. The study explores the main features of PC THz emitters for spectroscopic studies and sensors application in terms of THz field amplitude and spectral bandwidth. The emitters’ performance levels are found to depend strongly upon the PC material and antenna structure. The SI-InP emitters display lower THz field amplitude and narrower bandwidth compared to the SI-GaAs emitters with the same structure (and dimensions). The characterized Doubled BT structure yields a higher THz field amplitude, while the characterized Asymmetric BT structure with flat edges yields a higher bandwidth in comparison to the sharp-edged structures. This knowledge on the PC THz emitter characteristics, in terms of material and structure, can play a key role in future implementations and applications of THz sensor technology.https://www.mdpi.com/1424-8220/21/9/3131photoconductive THz emittersemi-insulating THz emitterbow-tie antenna |
| spellingShingle | Salman Alfihed Ian G. Foulds Jonathan F. Holzman Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters Sensors photoconductive THz emitter semi-insulating THz emitter bow-tie antenna |
| title | Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters |
| title_full | Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters |
| title_fullStr | Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters |
| title_full_unstemmed | Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters |
| title_short | Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters |
| title_sort | characteristics of bow tie antenna structures for semi insulating gaas and inp photoconductive terahertz emitters |
| topic | photoconductive THz emitter semi-insulating THz emitter bow-tie antenna |
| url | https://www.mdpi.com/1424-8220/21/9/3131 |
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