Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1−xSnxSe
The transverse Nernst-Ettingshausen (N-E) effect and electron mobility in Pb _1−x Sn _x Se alloys are studied experimentally and theoretically as functions of temperature and chemical composition in the vicinity of vanishing energy gap E _g . The study is motivated by the recent discovery that, by l...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2016-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/18/1/013047 |