Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress
1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. In this work, a systematic 1/f noise study has been carried out on the recessed-gate enhancement-mode (E-mode) GaN MOS-HEMTs under electrical and thermal stress together with...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9417086/ |
| _version_ | 1818644048531947520 |
|---|---|
| author | Qianlan Hu Chengru Gu Dan Zhan Xuefei Li Yanqing Wu |
| author_facet | Qianlan Hu Chengru Gu Dan Zhan Xuefei Li Yanqing Wu |
| author_sort | Qianlan Hu |
| collection | DOAJ |
| description | 1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. In this work, a systematic 1/f noise study has been carried out on the recessed-gate enhancement-mode (E-mode) GaN MOS-HEMTs under electrical and thermal stress together with the depletion-mode (D-mode) counterpart. Low-frequency (1–1000 Hz) measurement has been performed at room (25 °C) and elevated (100 °C) temperatures at different carrier densities at the drain bias of 2 V and 10 V. The results show the E-mode device has much better noise characteristics under high voltage and high temperature compared with the D-mode counterpart. Moreover, charge-noise model reveals that the improved noise behavior of the E-mode device at high density and high drain bias at 100 °C originating from the energy band alignment at high biases, where the D-mode device suffers from extra charge trapping scattering in the gate edge near the gate-to-drain access region. |
| first_indexed | 2024-12-17T00:08:39Z |
| format | Article |
| id | doaj.art-23c78825ac3b4f8a8045c989740fc61c |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-17T00:08:39Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-23c78825ac3b4f8a8045c989740fc61c2022-12-21T22:10:52ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-01951151610.1109/JEDS.2021.30763059417086Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal StressQianlan Hu0Chengru Gu1Dan Zhan2Xuefei Li3https://orcid.org/0000-0001-6406-6461Yanqing Wu4https://orcid.org/0000-0003-2578-5214School of Electronics Engineering and Computer Science, Peking University, Beijing, ChinaWuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, ChinaWuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, ChinaWuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, ChinaSchool of Electronics Engineering and Computer Science, Peking University, Beijing, China1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. In this work, a systematic 1/f noise study has been carried out on the recessed-gate enhancement-mode (E-mode) GaN MOS-HEMTs under electrical and thermal stress together with the depletion-mode (D-mode) counterpart. Low-frequency (1–1000 Hz) measurement has been performed at room (25 °C) and elevated (100 °C) temperatures at different carrier densities at the drain bias of 2 V and 10 V. The results show the E-mode device has much better noise characteristics under high voltage and high temperature compared with the D-mode counterpart. Moreover, charge-noise model reveals that the improved noise behavior of the E-mode device at high density and high drain bias at 100 °C originating from the energy band alignment at high biases, where the D-mode device suffers from extra charge trapping scattering in the gate edge near the gate-to-drain access region.https://ieeexplore.ieee.org/document/9417086/GaN MOS-HEMTs1/f noisetrapping effectphonon scatteringcarrier-number-fluctuationmobility-fluctuation |
| spellingShingle | Qianlan Hu Chengru Gu Dan Zhan Xuefei Li Yanqing Wu Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress IEEE Journal of the Electron Devices Society GaN MOS-HEMTs 1/f noise trapping effect phonon scattering carrier-number-fluctuation mobility-fluctuation |
| title | Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress |
| title_full | Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress |
| title_fullStr | Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress |
| title_full_unstemmed | Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress |
| title_short | Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress |
| title_sort | improved low frequency noise in recessed gate e mode algan gan mos hemts under electrical and thermal stress |
| topic | GaN MOS-HEMTs 1/f noise trapping effect phonon scattering carrier-number-fluctuation mobility-fluctuation |
| url | https://ieeexplore.ieee.org/document/9417086/ |
| work_keys_str_mv | AT qianlanhu improvedlowfrequencynoiseinrecessedgateemodealganganmoshemtsunderelectricalandthermalstress AT chengrugu improvedlowfrequencynoiseinrecessedgateemodealganganmoshemtsunderelectricalandthermalstress AT danzhan improvedlowfrequencynoiseinrecessedgateemodealganganmoshemtsunderelectricalandthermalstress AT xuefeili improvedlowfrequencynoiseinrecessedgateemodealganganmoshemtsunderelectricalandthermalstress AT yanqingwu improvedlowfrequencynoiseinrecessedgateemodealganganmoshemtsunderelectricalandthermalstress |