Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3
Abstract The electron‐phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting...
| Main Authors: | , , , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-08-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202301057 |
| _version_ | 1797754784742113280 |
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| author | Zhenwei Ou Bin Peng Weibin Chu Zhe Li Cheng Wang Yan Zeng Hongyi Chen Qiuyu Wang Guohua Dong Yongyi Wu Ruibin Qiu Li Ma Lili Zhang Xiaoze Liu Tao Li Ting Yu Zhongqiang Hu Ti Wang Ming Liu Hongxing Xu |
| author_facet | Zhenwei Ou Bin Peng Weibin Chu Zhe Li Cheng Wang Yan Zeng Hongyi Chen Qiuyu Wang Guohua Dong Yongyi Wu Ruibin Qiu Li Ma Lili Zhang Xiaoze Liu Tao Li Ting Yu Zhongqiang Hu Ti Wang Ming Liu Hongxing Xu |
| author_sort | Zhenwei Ou |
| collection | DOAJ |
| description | Abstract The electron‐phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting impact on the carrier transport property is significant for the development of high‐efficiency electronic devices. Here, carrier transport behavior mediated by the electron‐phonon coupling in BiFeO3 epitaxial thin films is directly observed. Acoustic phonons are generated by the inverse piezoelectric effect and coupled with photocarriers. Via the electron‐phonon coupling, doughnut shape carrier distribution has been observed due to the coupling between hot carriers and phonons. The hot carrier quasi‐ballistic transport length can reach 340 nm within 1 ps. The results suggest an effective approach to investigating the effects of electron‐phonon interactions with temporal and spatial resolutions, which is of great importance for designing and improving electronic devices. |
| first_indexed | 2024-03-12T17:37:23Z |
| format | Article |
| id | doaj.art-23d7315da680440e8f6b038cc0d7f138 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-12T17:37:23Z |
| publishDate | 2023-08-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-23d7315da680440e8f6b038cc0d7f1382023-08-04T07:49:49ZengWileyAdvanced Science2198-38442023-08-011022n/an/a10.1002/advs.202301057Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3Zhenwei Ou0Bin Peng1Weibin Chu2Zhe Li3Cheng Wang4Yan Zeng5Hongyi Chen6Qiuyu Wang7Guohua Dong8Yongyi Wu9Ruibin Qiu10Li Ma11Lili Zhang12Xiaoze Liu13Tao Li14Ting Yu15Zhongqiang Hu16Ti Wang17Ming Liu18Hongxing Xu19School of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 ChinaElectronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an 710049 ChinaKey Laboratory of Computational Physical Sciences (Ministry of Education) Institute of Computational Physical Sciences Fudan University Shanghai 200433 ChinaSchool of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 ChinaSchool of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 ChinaSchool of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 ChinaSchool of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 ChinaKey Laboratory of Material Physics Ministry of Education School of Physics and Microelectronics Zhengzhou University Zhengzhou 450001 ChinaElectronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an 710049 ChinaCenter for Spintronics and Quantum Systems State Key Laboratory for Mechanical Behavior of Materials Department of Materials Science and Engineering Xi'an Jiaotong University Xi'an 710049 ChinaElectronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an 710049 ChinaSchool of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 ChinaKey Laboratory of Material Physics Ministry of Education School of Physics and Microelectronics Zhengzhou University Zhengzhou 450001 ChinaSchool of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 ChinaCenter for Spintronics and Quantum Systems State Key Laboratory for Mechanical Behavior of Materials Department of Materials Science and Engineering Xi'an Jiaotong University Xi'an 710049 ChinaSchool of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 ChinaElectronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an 710049 ChinaSchool of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 ChinaElectronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an 710049 ChinaSchool of Physics and Technology Center for Nanoscience and Nanotechnology and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 ChinaAbstract The electron‐phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting impact on the carrier transport property is significant for the development of high‐efficiency electronic devices. Here, carrier transport behavior mediated by the electron‐phonon coupling in BiFeO3 epitaxial thin films is directly observed. Acoustic phonons are generated by the inverse piezoelectric effect and coupled with photocarriers. Via the electron‐phonon coupling, doughnut shape carrier distribution has been observed due to the coupling between hot carriers and phonons. The hot carrier quasi‐ballistic transport length can reach 340 nm within 1 ps. The results suggest an effective approach to investigating the effects of electron‐phonon interactions with temporal and spatial resolutions, which is of great importance for designing and improving electronic devices.https://doi.org/10.1002/advs.202301057BiFeO3carrier transportelectron‐phonon couplingtransient absorption microscopy |
| spellingShingle | Zhenwei Ou Bin Peng Weibin Chu Zhe Li Cheng Wang Yan Zeng Hongyi Chen Qiuyu Wang Guohua Dong Yongyi Wu Ruibin Qiu Li Ma Lili Zhang Xiaoze Liu Tao Li Ting Yu Zhongqiang Hu Ti Wang Ming Liu Hongxing Xu Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3 Advanced Science BiFeO3 carrier transport electron‐phonon coupling transient absorption microscopy |
| title | Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3 |
| title_full | Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3 |
| title_fullStr | Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3 |
| title_full_unstemmed | Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3 |
| title_short | Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3 |
| title_sort | strong electron phonon coupling mediates carrier transport in bifeo3 |
| topic | BiFeO3 carrier transport electron‐phonon coupling transient absorption microscopy |
| url | https://doi.org/10.1002/advs.202301057 |
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