Penentuan Konstanta Optis di Daerah Absorpsi Fundamental Menggunakan Formulasi Forouhi dan Bloomer untuk Lapisan Tipis Amorf Silikon Karbon (A-Sic:H)

An expression of the imaginary and real parts of the complex refractive index derived by Forouhi and Bloomer have been applied to obtain wider energy range of optical constants for amorphous silicon carbon (a-SiC:H) films deposited by dc sputtering method using silicon and graphite targets. Excellen...

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Main Authors: Dewi Marianty, Lusitra Munisa, Rosari Saleh
Format: Article
Language:English
Published: Universitas Indonesia 2002-08-01
Series:Makara Seri Sains
Subjects:
Online Access:http://journal.ui.ac.id/science/article/view/144/140
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author Dewi Marianty
Lusitra Munisa
Rosari Saleh
author_facet Dewi Marianty
Lusitra Munisa
Rosari Saleh
author_sort Dewi Marianty
collection DOAJ
description An expression of the imaginary and real parts of the complex refractive index derived by Forouhi and Bloomer have been applied to obtain wider energy range of optical constants for amorphous silicon carbon (a-SiC:H) films deposited by dc sputtering method using silicon and graphite targets. Excellent agreement was obtained between the formula and experimentally measured values of both n(E) and k(E). The optical constants obey Kramers-Kronig dispersion relation and show a maximum at high-energy range. The dependence of five parameters to carbon concentration and the variation of optical constants with composition for both targets will be discussed.
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spelling doaj.art-24054bbf0dcf45f285d76e8ed7fba1402022-12-22T03:21:52ZengUniversitas IndonesiaMakara Seri Sains1693-66712002-08-010625964Penentuan Konstanta Optis di Daerah Absorpsi Fundamental Menggunakan Formulasi Forouhi dan Bloomer untuk Lapisan Tipis Amorf Silikon Karbon (A-Sic:H)Dewi MariantyLusitra MunisaRosari SalehAn expression of the imaginary and real parts of the complex refractive index derived by Forouhi and Bloomer have been applied to obtain wider energy range of optical constants for amorphous silicon carbon (a-SiC:H) films deposited by dc sputtering method using silicon and graphite targets. Excellent agreement was obtained between the formula and experimentally measured values of both n(E) and k(E). The optical constants obey Kramers-Kronig dispersion relation and show a maximum at high-energy range. The dependence of five parameters to carbon concentration and the variation of optical constants with composition for both targets will be discussed.http://journal.ui.ac.id/science/article/view/144/140optical constantsabsorptionamorphous silicon carbonsputtering
spellingShingle Dewi Marianty
Lusitra Munisa
Rosari Saleh
Penentuan Konstanta Optis di Daerah Absorpsi Fundamental Menggunakan Formulasi Forouhi dan Bloomer untuk Lapisan Tipis Amorf Silikon Karbon (A-Sic:H)
Makara Seri Sains
optical constants
absorption
amorphous silicon carbon
sputtering
title Penentuan Konstanta Optis di Daerah Absorpsi Fundamental Menggunakan Formulasi Forouhi dan Bloomer untuk Lapisan Tipis Amorf Silikon Karbon (A-Sic:H)
title_full Penentuan Konstanta Optis di Daerah Absorpsi Fundamental Menggunakan Formulasi Forouhi dan Bloomer untuk Lapisan Tipis Amorf Silikon Karbon (A-Sic:H)
title_fullStr Penentuan Konstanta Optis di Daerah Absorpsi Fundamental Menggunakan Formulasi Forouhi dan Bloomer untuk Lapisan Tipis Amorf Silikon Karbon (A-Sic:H)
title_full_unstemmed Penentuan Konstanta Optis di Daerah Absorpsi Fundamental Menggunakan Formulasi Forouhi dan Bloomer untuk Lapisan Tipis Amorf Silikon Karbon (A-Sic:H)
title_short Penentuan Konstanta Optis di Daerah Absorpsi Fundamental Menggunakan Formulasi Forouhi dan Bloomer untuk Lapisan Tipis Amorf Silikon Karbon (A-Sic:H)
title_sort penentuan konstanta optis di daerah absorpsi fundamental menggunakan formulasi forouhi dan bloomer untuk lapisan tipis amorf silikon karbon a sic h
topic optical constants
absorption
amorphous silicon carbon
sputtering
url http://journal.ui.ac.id/science/article/view/144/140
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