ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4

Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part...

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Main Authors: Hasan Atesci, Wouter Gelling, Francesco Coneri, Hans Hilgenkamp, Jan M. van Ruitenbeek
Format: Article
Language:English
Published: MDPI AG 2018-02-01
Series:International Journal of Molecular Sciences
Subjects:
Online Access:http://www.mdpi.com/1422-0067/19/2/566
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author Hasan Atesci
Wouter Gelling
Francesco Coneri
Hans Hilgenkamp
Jan M. van Ruitenbeek
author_facet Hasan Atesci
Wouter Gelling
Francesco Coneri
Hans Hilgenkamp
Jan M. van Ruitenbeek
author_sort Hasan Atesci
collection DOAJ
description Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to − 2 V. A non-electrostatic mechanism takes over for gate voltages below − 2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.
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spelling doaj.art-242b059dfa654fbbbbff9398148c765a2022-12-22T02:54:40ZengMDPI AGInternational Journal of Molecular Sciences1422-00672018-02-0119256610.3390/ijms19020566ijms19020566ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4Hasan Atesci0Wouter Gelling1Francesco Coneri2Hans Hilgenkamp3Jan M. van Ruitenbeek4Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 RA Leiden, The NetherlandsHuygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 RA Leiden, The NetherlandsMESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The NetherlandsMESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The NetherlandsHuygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 RA Leiden, The NetherlandsIonic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to − 2 V. A non-electrostatic mechanism takes over for gate voltages below − 2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.http://www.mdpi.com/1422-0067/19/2/566La2−xSrxCuO4ionic liquidelectric double layeroxygenation
spellingShingle Hasan Atesci
Wouter Gelling
Francesco Coneri
Hans Hilgenkamp
Jan M. van Ruitenbeek
ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4
International Journal of Molecular Sciences
La2−xSrxCuO4
ionic liquid
electric double layer
oxygenation
title ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4
title_full ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4
title_fullStr ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4
title_full_unstemmed ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4
title_short ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4
title_sort on the nature of ionic liquid gating of la2 xsrxcuo4
topic La2−xSrxCuO4
ionic liquid
electric double layer
oxygenation
url http://www.mdpi.com/1422-0067/19/2/566
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AT hanshilgenkamp onthenatureofionicliquidgatingofla2xsrxcuo4
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