Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application
In this research, <inline-formula> <tex-math notation="LaTeX">$\Gamma $ </tex-math></inline-formula>-gated AlGaN/GaN HEMTs with different layout designs and heights of gate stems were fabricated to investigate their impacts on the noise performance in the Ka-band. F...
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10335920/ |
| _version_ | 1827398999786651648 |
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| author | Ping-Hsun Lee Yueh-Chin Lin Heng-Tung Hsu Cheng-Hsien Yu Yi-Fan Tsao Pin Su Edward Yi Chang |
| author_facet | Ping-Hsun Lee Yueh-Chin Lin Heng-Tung Hsu Cheng-Hsien Yu Yi-Fan Tsao Pin Su Edward Yi Chang |
| author_sort | Ping-Hsun Lee |
| collection | DOAJ |
| description | In this research, <inline-formula> <tex-math notation="LaTeX">$\Gamma $ </tex-math></inline-formula>-gated AlGaN/GaN HEMTs with different layout designs and heights of gate stems were fabricated to investigate their impacts on the noise performance in the Ka-band. First, devices with 4 types of gate peripheries were prepared to optimize the layout structure for best noise performance since the values of parasitic capacitance and resistance, which are detrimental to the noise characteristic, vary as the gate widths and the number of fingers change. The device with gate width of <inline-formula> <tex-math notation="LaTeX">$4\times 50\,\,\mu {\mathrm{ m}}$ </tex-math></inline-formula> achieved the optimal noise performance, minimum noise figure (NFmin) of 1.5 dB and associated gain of 6.2 dB at 28 GHz. Next, devices with different gate stem heights were fabricated following the <inline-formula> <tex-math notation="LaTeX">$4\times 50\,\,\mu {\mathrm{ m}}$ </tex-math></inline-formula> layout pattern. The raised gate structure was applied to reduce the parasitic capacitance of the device for RF power performance enhancement, but a taller gate stem unfortunately results in the increment of gate resistance. Therefore, the impact of stem height on NFmin remains unknown. According to the experiment results, the device with a stem height of 200 nm stands out to be a viable compromise for the noise and output power performance in the Ka-band, thus providing a positive outlook for the feasibilities of single-chip circuit integration of both LNA and PA at millimeter-wave spectrum. |
| first_indexed | 2024-03-08T19:38:03Z |
| format | Article |
| id | doaj.art-243c09fae0f740d8b4ca35d1e15fefa8 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-08T19:38:03Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-243c09fae0f740d8b4ca35d1e15fefa82023-12-26T00:01:33ZengIEEEIEEE Journal of the Electron Devices Society2168-67342023-01-011174475110.1109/JEDS.2023.333778010335920Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA ApplicationPing-Hsun Lee0https://orcid.org/0000-0002-1249-3610Yueh-Chin Lin1Heng-Tung Hsu2https://orcid.org/0000-0002-7753-5690Cheng-Hsien Yu3Yi-Fan Tsao4https://orcid.org/0000-0001-6601-8308Pin Su5https://orcid.org/0000-0002-8213-4103Edward Yi Chang6https://orcid.org/0000-0003-1616-5240Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, TaiwanDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, TaiwanInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, TaiwanDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, TaiwanInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, TaiwanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, TaiwanDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, TaiwanIn this research, <inline-formula> <tex-math notation="LaTeX">$\Gamma $ </tex-math></inline-formula>-gated AlGaN/GaN HEMTs with different layout designs and heights of gate stems were fabricated to investigate their impacts on the noise performance in the Ka-band. First, devices with 4 types of gate peripheries were prepared to optimize the layout structure for best noise performance since the values of parasitic capacitance and resistance, which are detrimental to the noise characteristic, vary as the gate widths and the number of fingers change. The device with gate width of <inline-formula> <tex-math notation="LaTeX">$4\times 50\,\,\mu {\mathrm{ m}}$ </tex-math></inline-formula> achieved the optimal noise performance, minimum noise figure (NFmin) of 1.5 dB and associated gain of 6.2 dB at 28 GHz. Next, devices with different gate stem heights were fabricated following the <inline-formula> <tex-math notation="LaTeX">$4\times 50\,\,\mu {\mathrm{ m}}$ </tex-math></inline-formula> layout pattern. The raised gate structure was applied to reduce the parasitic capacitance of the device for RF power performance enhancement, but a taller gate stem unfortunately results in the increment of gate resistance. Therefore, the impact of stem height on NFmin remains unknown. According to the experiment results, the device with a stem height of 200 nm stands out to be a viable compromise for the noise and output power performance in the Ka-band, thus providing a positive outlook for the feasibilities of single-chip circuit integration of both LNA and PA at millimeter-wave spectrum.https://ieeexplore.ieee.org/document/10335920/AlGaN/GaN HEMTnoise figureLNA |
| spellingShingle | Ping-Hsun Lee Yueh-Chin Lin Heng-Tung Hsu Cheng-Hsien Yu Yi-Fan Tsao Pin Su Edward Yi Chang Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application IEEE Journal of the Electron Devices Society AlGaN/GaN HEMT noise figure LNA |
| title | Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application |
| title_full | Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application |
| title_fullStr | Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application |
| title_full_unstemmed | Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application |
| title_short | Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application |
| title_sort | noise performance investigation of algan gan hemt with tall gate stem for millimeter wave lna application |
| topic | AlGaN/GaN HEMT noise figure LNA |
| url | https://ieeexplore.ieee.org/document/10335920/ |
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