Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs
In this paper, the reliability of InP/InGaAs DHBTs under high reverse base–collector bias stress is analyzed by experiments and simulation. The DC characteristics and S parameters of the devices under different stress times were measured, and the key parameters with high field stress were also extra...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/11/2073 |
| _version_ | 1797458359927963648 |
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| author | Silu Yan Hongliang Lu Lin Cheng Jiantao Qiao Wei Cheng Yuming Zhang |
| author_facet | Silu Yan Hongliang Lu Lin Cheng Jiantao Qiao Wei Cheng Yuming Zhang |
| author_sort | Silu Yan |
| collection | DOAJ |
| description | In this paper, the reliability of InP/InGaAs DHBTs under high reverse base–collector bias stress is analyzed by experiments and simulation. The DC characteristics and S parameters of the devices under different stress times were measured, and the key parameters with high field stress were also extracted to fully understand and analyze the high-field degradation mechanism of devices. The measurements indicate that the high-field stress leads to an increase in base current, an increase in base–collector (B–C) and base–emitter (B–E) junction leakage current, and a decrease in current gain, and different degrees of degradation of key parameters over stress time. The analysis reveals that the degradation caused by reverse high-field stress mainly occurs in the B–C junction, access resistance degradation, and passivation layer. The physical origins of these failure mechanisms have been studied based on TCAD simulation, and a physical model is proposed to explain the experimental results. |
| first_indexed | 2024-03-09T16:36:00Z |
| format | Article |
| id | doaj.art-24483b4355cb4a3e855fd65307294016 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T16:36:00Z |
| publishDate | 2023-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-24483b4355cb4a3e855fd653072940162023-11-24T14:56:27ZengMDPI AGMicromachines2072-666X2023-11-011411207310.3390/mi14112073Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTsSilu Yan0Hongliang Lu1Lin Cheng2Jiantao Qiao3Wei Cheng4Yuming Zhang5Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi’an 710071, ChinaScience and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi’an 710071, ChinaIn this paper, the reliability of InP/InGaAs DHBTs under high reverse base–collector bias stress is analyzed by experiments and simulation. The DC characteristics and S parameters of the devices under different stress times were measured, and the key parameters with high field stress were also extracted to fully understand and analyze the high-field degradation mechanism of devices. The measurements indicate that the high-field stress leads to an increase in base current, an increase in base–collector (B–C) and base–emitter (B–E) junction leakage current, and a decrease in current gain, and different degrees of degradation of key parameters over stress time. The analysis reveals that the degradation caused by reverse high-field stress mainly occurs in the B–C junction, access resistance degradation, and passivation layer. The physical origins of these failure mechanisms have been studied based on TCAD simulation, and a physical model is proposed to explain the experimental results.https://www.mdpi.com/2072-666X/14/11/2073heterostructure bipolar transistor (HBT)indium phosphideTCAD modelingreliabilityelectrical stress |
| spellingShingle | Silu Yan Hongliang Lu Lin Cheng Jiantao Qiao Wei Cheng Yuming Zhang Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs Micromachines heterostructure bipolar transistor (HBT) indium phosphide TCAD modeling reliability electrical stress |
| title | Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs |
| title_full | Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs |
| title_fullStr | Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs |
| title_full_unstemmed | Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs |
| title_short | Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs |
| title_sort | characteristics and degradation mechanisms under high reverse base collector bias stress in ingaas inp double hbts |
| topic | heterostructure bipolar transistor (HBT) indium phosphide TCAD modeling reliability electrical stress |
| url | https://www.mdpi.com/2072-666X/14/11/2073 |
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