Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors

Low cost and low power consumption of transistors are needed for the development of internet of things. Here Chung et al. develop a high performance n-type oxide thin film transistor by introducing a ligand for crosslinking nanoparticles and polymers, obtaining a near-ideal hybrid dielectric layer.

Bibliographic Details
Main Authors: Juhyeok Lee, Syed Zahid Hassan, Sangjun Lee, Hye Ryun Sim, Dae Sung Chung
Format: Article
Language:English
Published: Nature Portfolio 2022-11-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-022-34772-x
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author Juhyeok Lee
Syed Zahid Hassan
Sangjun Lee
Hye Ryun Sim
Dae Sung Chung
author_facet Juhyeok Lee
Syed Zahid Hassan
Sangjun Lee
Hye Ryun Sim
Dae Sung Chung
author_sort Juhyeok Lee
collection DOAJ
description Low cost and low power consumption of transistors are needed for the development of internet of things. Here Chung et al. develop a high performance n-type oxide thin film transistor by introducing a ligand for crosslinking nanoparticles and polymers, obtaining a near-ideal hybrid dielectric layer.
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spelling doaj.art-245e5c40227e46d7b0df059f2aa7952c2022-12-22T02:46:23ZengNature PortfolioNature Communications2041-17232022-11-0113111110.1038/s41467-022-34772-xAzide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistorsJuhyeok Lee0Syed Zahid Hassan1Sangjun Lee2Hye Ryun Sim3Dae Sung Chung4Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH)Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH)Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH)Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH)Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH)Low cost and low power consumption of transistors are needed for the development of internet of things. Here Chung et al. develop a high performance n-type oxide thin film transistor by introducing a ligand for crosslinking nanoparticles and polymers, obtaining a near-ideal hybrid dielectric layer.https://doi.org/10.1038/s41467-022-34772-x
spellingShingle Juhyeok Lee
Syed Zahid Hassan
Sangjun Lee
Hye Ryun Sim
Dae Sung Chung
Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors
Nature Communications
title Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors
title_full Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors
title_fullStr Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors
title_full_unstemmed Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors
title_short Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors
title_sort azide functionalized ligand enabling organic inorganic hybrid dielectric for high performance solution processed oxide transistors
url https://doi.org/10.1038/s41467-022-34772-x
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AT hyeryunsim azidefunctionalizedligandenablingorganicinorganichybriddielectricforhighperformancesolutionprocessedoxidetransistors
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