Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited

The results of a high-resolution Raman scattering study of a diamond crystal with a high content of single substitutional nitrogen impurities (550 ppm) in the temperature range from 50 to 673 K are presented and compared with the data for defect-free diamond. It is established that the increase of t...

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Main Authors: Nikolay V. Surovtsev, Igor N. Kupriyanov
Format: Article
Language:English
Published: MDPI AG 2017-07-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/7/8/239
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author Nikolay V. Surovtsev
Igor N. Kupriyanov
author_facet Nikolay V. Surovtsev
Igor N. Kupriyanov
author_sort Nikolay V. Surovtsev
collection DOAJ
description The results of a high-resolution Raman scattering study of a diamond crystal with a high content of single substitutional nitrogen impurities (550 ppm) in the temperature range from 50 to 673 K are presented and compared with the data for defect-free diamond. It is established that the increase of the nitrogen concentration in diamond leads to the temperature-independent increase of the Raman line width. Analysis of the experimental data allows us to conclude that this broadening should be attributed to the defect-induced shortening of the Raman phonon lifetime. We believe that this mechanism is responsible for the increase of the Raman line width caused by most point-like defects in diamond. No pronounced effects of the nitrogen defects on the Raman line position and phonon anharmonicity are observed.
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spelling doaj.art-24bf75e5038540d3886ae3e1fe34ca8a2022-12-22T04:25:14ZengMDPI AGCrystals2073-43522017-07-017823910.3390/cryst7080239cryst7080239Effect of Nitrogen Impurities on the Raman Line Width in Diamond, RevisitedNikolay V. Surovtsev0Igor N. Kupriyanov1Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences, Koptyug ave., 1, 630090 Novosibirsk, RussiaSobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Koptyug ave., 3, 630090 Novosibirsk, RussiaThe results of a high-resolution Raman scattering study of a diamond crystal with a high content of single substitutional nitrogen impurities (550 ppm) in the temperature range from 50 to 673 K are presented and compared with the data for defect-free diamond. It is established that the increase of the nitrogen concentration in diamond leads to the temperature-independent increase of the Raman line width. Analysis of the experimental data allows us to conclude that this broadening should be attributed to the defect-induced shortening of the Raman phonon lifetime. We believe that this mechanism is responsible for the increase of the Raman line width caused by most point-like defects in diamond. No pronounced effects of the nitrogen defects on the Raman line position and phonon anharmonicity are observed.https://www.mdpi.com/2073-4352/7/8/239diamondRaman scatteringRaman linewidthnitrogen defects
spellingShingle Nikolay V. Surovtsev
Igor N. Kupriyanov
Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited
Crystals
diamond
Raman scattering
Raman linewidth
nitrogen defects
title Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited
title_full Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited
title_fullStr Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited
title_full_unstemmed Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited
title_short Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited
title_sort effect of nitrogen impurities on the raman line width in diamond revisited
topic diamond
Raman scattering
Raman linewidth
nitrogen defects
url https://www.mdpi.com/2073-4352/7/8/239
work_keys_str_mv AT nikolayvsurovtsev effectofnitrogenimpuritiesontheramanlinewidthindiamondrevisited
AT igornkupriyanov effectofnitrogenimpuritiesontheramanlinewidthindiamondrevisited