Effect of Oxygen Vacancy on the Conduction Modulation Linearity and Classification Accuracy of Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Memristor

Effect of Oxygen Vacancy on the Conduction Modulation Linearity and Classification Accuracy of Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Memristor

An amorphous Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> (PCMO) film was grown on a TiN/SiO<sub>2</sub>/Si (TiN–Si) substrate at 300 °C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor showed typical bipolar switching characteristic...

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Bibliographic Details
Main Authors: Yeon Pyo, Jong-Un Woo, Hyun-Gyu Hwang, Sahn Nahm, Jichai Jeong
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Nanomaterials
Subjects:
Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub>
memristor
resistive switching memory
convolutional neural network
Online Access:https://www.mdpi.com/2079-4991/11/10/2684

Internet

https://www.mdpi.com/2079-4991/11/10/2684

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