Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
Abstract Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correl...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2017-10-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-12950-y |
| _version_ | 1818835171520020480 |
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| author | Nicoló Oliva Emanuele Andrea Casu Chen Yan Anna Krammer Teodor Rosca Arnaud Magrez Igor Stolichnov Andreas Schueler Olivier J. F. Martin Adrian Mihai Ionescu |
| author_facet | Nicoló Oliva Emanuele Andrea Casu Chen Yan Anna Krammer Teodor Rosca Arnaud Magrez Igor Stolichnov Andreas Schueler Olivier J. F. Martin Adrian Mihai Ionescu |
| author_sort | Nicoló Oliva |
| collection | DOAJ |
| description | Abstract Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS2) on a phase transition material, vanadium dioxide (VO2). The vdW MoS2/VO2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO2. We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range. |
| first_indexed | 2024-12-19T02:46:28Z |
| format | Article |
| id | doaj.art-25553cec999049ab81a5d5611f9fe1df |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-19T02:46:28Z |
| publishDate | 2017-10-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-25553cec999049ab81a5d5611f9fe1df2022-12-21T20:38:51ZengNature PortfolioScientific Reports2045-23222017-10-01711810.1038/s41598-017-12950-yVan der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponseNicoló Oliva0Emanuele Andrea Casu1Chen Yan2Anna Krammer3Teodor Rosca4Arnaud Magrez5Igor Stolichnov6Andreas Schueler7Olivier J. F. Martin8Adrian Mihai Ionescu9Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL)Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL)Nanophotonics and Metrology Laboratory (NAM), École Polytechnique Fédérale de Lausanne (EPFL)Solar Energy and Building Physics Laboratory (LESO-PB), École Polytechnique Fédérale de Lausanne (EPFL)Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL)Istitut de Physique (IPHYS), École Polytechnique Fédérale de Lausanne (EPFL)Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL)Solar Energy and Building Physics Laboratory (LESO-PB), École Polytechnique Fédérale de Lausanne (EPFL)Nanophotonics and Metrology Laboratory (NAM), École Polytechnique Fédérale de Lausanne (EPFL)Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL)Abstract Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS2) on a phase transition material, vanadium dioxide (VO2). The vdW MoS2/VO2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO2. We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.https://doi.org/10.1038/s41598-017-12950-y |
| spellingShingle | Nicoló Oliva Emanuele Andrea Casu Chen Yan Anna Krammer Teodor Rosca Arnaud Magrez Igor Stolichnov Andreas Schueler Olivier J. F. Martin Adrian Mihai Ionescu Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse Scientific Reports |
| title | Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse |
| title_full | Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse |
| title_fullStr | Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse |
| title_full_unstemmed | Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse |
| title_short | Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse |
| title_sort | van der waals mos2 vo2 heterostructure junction with tunable rectifier behavior and efficient photoresponse |
| url | https://doi.org/10.1038/s41598-017-12950-y |
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