Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN
This paper has studied the metal–insulator-semiconductor (MIS) contact for both p- and n-InGaN. We found that the insulator layer thickness has a remarkable effect on the Fermi level pinning and barrier height reduction in MIS contacts. Schottky's formation with doped InGaN is explained by exte...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2020-12-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379720321008 |
| _version_ | 1819295895913496576 |
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| author | Abdullah Al Mamun Mazumder Md. Soyaeb Hasan Ahmed I.M. Iskanderani Md. Rafiqul Islam Md. Tanvir Hasan Ibrahim Mustafa Mehedi |
| author_facet | Abdullah Al Mamun Mazumder Md. Soyaeb Hasan Ahmed I.M. Iskanderani Md. Rafiqul Islam Md. Tanvir Hasan Ibrahim Mustafa Mehedi |
| author_sort | Abdullah Al Mamun Mazumder |
| collection | DOAJ |
| description | This paper has studied the metal–insulator-semiconductor (MIS) contact for both p- and n-InGaN. We found that the insulator layer thickness has a remarkable effect on the Fermi level pinning and barrier height reduction in MIS contacts. Schottky's formation with doped InGaN is explained by extending the MIS contacts' using the metal-induced gap states (MIGS) model. The J-V characteristics clarify the current transport mechanism through the MIS contact with InGaN semiconductor for different temperatures. We observed less control on the barrier height reduction in the case of n-InGaN through changing the thickness of the interfacial layer. The calculated contact resistivities of MIS contact with p- and n-InGaN show better results than the metal–semiconductor contact counterparts. These findings are highly significant to design and fabricate the InGaN based switching devices for converter applications. |
| first_indexed | 2024-12-24T04:49:29Z |
| format | Article |
| id | doaj.art-2568ffa306014236ac2025b29cf5f97a |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-24T04:49:29Z |
| publishDate | 2020-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-2568ffa306014236ac2025b29cf5f97a2022-12-21T17:14:35ZengElsevierResults in Physics2211-37972020-12-0119103679Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaNAbdullah Al Mamun Mazumder0Md. Soyaeb Hasan1Ahmed I.M. Iskanderani2Md. Rafiqul Islam3Md. Tanvir Hasan4Ibrahim Mustafa Mehedi5Department of Electrical and Electronic Engineering (EEE), Khulna University of Engineering & Technology, Khulna 9203, BangladeshDepartment of Electrical Electronic and Communication Engineering (EECE), Military Institute of Science & Technology, Dhaka 1216, BangladeshDepartment of Electrical and Computer Engineering (ECE), King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Electrical and Electronic Engineering (EEE), Khulna University of Engineering & Technology, Khulna 9203, BangladeshDepartment of Electrical and Electronic Engineering (EEE), Jashore University of Science and Technology, Jashore 7408, Bangladesh; Corresponding author.Department of Electrical and Computer Engineering (ECE), King Abdulaziz University, Jeddah 21589, Saudi Arabia; Center of Excellence in Intelligent Engineering Systems (CEIES), King Abdulaziz University, Jeddah 21589, Saudi ArabiaThis paper has studied the metal–insulator-semiconductor (MIS) contact for both p- and n-InGaN. We found that the insulator layer thickness has a remarkable effect on the Fermi level pinning and barrier height reduction in MIS contacts. Schottky's formation with doped InGaN is explained by extending the MIS contacts' using the metal-induced gap states (MIGS) model. The J-V characteristics clarify the current transport mechanism through the MIS contact with InGaN semiconductor for different temperatures. We observed less control on the barrier height reduction in the case of n-InGaN through changing the thickness of the interfacial layer. The calculated contact resistivities of MIS contact with p- and n-InGaN show better results than the metal–semiconductor contact counterparts. These findings are highly significant to design and fabricate the InGaN based switching devices for converter applications.http://www.sciencedirect.com/science/article/pii/S2211379720321008MIGS modelInGaNMIS ContactBarrier HeightContact Resistivity |
| spellingShingle | Abdullah Al Mamun Mazumder Md. Soyaeb Hasan Ahmed I.M. Iskanderani Md. Rafiqul Islam Md. Tanvir Hasan Ibrahim Mustafa Mehedi Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN Results in Physics MIGS model InGaN MIS Contact Barrier Height Contact Resistivity |
| title | Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN |
| title_full | Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN |
| title_fullStr | Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN |
| title_full_unstemmed | Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN |
| title_short | Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN |
| title_sort | analytical study of metal insulator semiconductor contacts for both p and n ingan |
| topic | MIGS model InGaN MIS Contact Barrier Height Contact Resistivity |
| url | http://www.sciencedirect.com/science/article/pii/S2211379720321008 |
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