Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN
This paper has studied the metal–insulator-semiconductor (MIS) contact for both p- and n-InGaN. We found that the insulator layer thickness has a remarkable effect on the Fermi level pinning and barrier height reduction in MIS contacts. Schottky's formation with doped InGaN is explained by exte...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2020-12-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379720321008 |