Investigating charge trapping in ferroelectric thin films through transient measurements
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by analyzing the magnitude and rate of polarizat...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2022-08-01
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| Series: | Frontiers in Nanotechnology |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fnano.2022.939822/full |
| _version_ | 1798039841358741504 |
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| author | Suzanne Lancaster Patrick D. Lomenzo Moritz Engl Bohan Xu Thomas Mikolajick Thomas Mikolajick Uwe Schroeder Stefan Slesazeck |
| author_facet | Suzanne Lancaster Patrick D. Lomenzo Moritz Engl Bohan Xu Thomas Mikolajick Thomas Mikolajick Uwe Schroeder Stefan Slesazeck |
| author_sort | Suzanne Lancaster |
| collection | DOAJ |
| description | A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by analyzing the magnitude and rate of polarization loss. Exemplary measurements have been performed on Hf0.5Zr0.5O2 (HZO) and HZO/Al2O3 films, as a function of pulse width and temperature. It is found that the competing effects of the depolarization field, internal bias field and charge trapping lead to a characteristic Gaussian dependence of the rate of polarization loss on the delay time. From this, a charge trapping and screening model could be identified which describes the dynamics of polarization loss on short timescales. |
| first_indexed | 2024-04-11T21:59:15Z |
| format | Article |
| id | doaj.art-256c33b1aa424843b58a853c6579a308 |
| institution | Directory Open Access Journal |
| issn | 2673-3013 |
| language | English |
| last_indexed | 2024-04-11T21:59:15Z |
| publishDate | 2022-08-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Nanotechnology |
| spelling | doaj.art-256c33b1aa424843b58a853c6579a3082022-12-22T04:01:00ZengFrontiers Media S.A.Frontiers in Nanotechnology2673-30132022-08-01410.3389/fnano.2022.939822939822Investigating charge trapping in ferroelectric thin films through transient measurementsSuzanne Lancaster0Patrick D. Lomenzo1Moritz Engl2Bohan Xu3Thomas Mikolajick4Thomas Mikolajick5Uwe Schroeder6Stefan Slesazeck7NaMLab gGmbH, Dresden, GermanyNaMLab gGmbH, Dresden, GermanyNaMLab gGmbH, Dresden, GermanyNaMLab gGmbH, Dresden, GermanyNaMLab gGmbH, Dresden, GermanyChair of Nanoelectronics, TU Dresden, Dresden, GermanyNaMLab gGmbH, Dresden, GermanyNaMLab gGmbH, Dresden, GermanyA measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by analyzing the magnitude and rate of polarization loss. Exemplary measurements have been performed on Hf0.5Zr0.5O2 (HZO) and HZO/Al2O3 films, as a function of pulse width and temperature. It is found that the competing effects of the depolarization field, internal bias field and charge trapping lead to a characteristic Gaussian dependence of the rate of polarization loss on the delay time. From this, a charge trapping and screening model could be identified which describes the dynamics of polarization loss on short timescales.https://www.frontiersin.org/articles/10.3389/fnano.2022.939822/fullferroelectricsdielectricshafnium zirconium oxidecharge trappingelectrical characterizationpolarization switching |
| spellingShingle | Suzanne Lancaster Patrick D. Lomenzo Moritz Engl Bohan Xu Thomas Mikolajick Thomas Mikolajick Uwe Schroeder Stefan Slesazeck Investigating charge trapping in ferroelectric thin films through transient measurements Frontiers in Nanotechnology ferroelectrics dielectrics hafnium zirconium oxide charge trapping electrical characterization polarization switching |
| title | Investigating charge trapping in ferroelectric thin films through transient measurements |
| title_full | Investigating charge trapping in ferroelectric thin films through transient measurements |
| title_fullStr | Investigating charge trapping in ferroelectric thin films through transient measurements |
| title_full_unstemmed | Investigating charge trapping in ferroelectric thin films through transient measurements |
| title_short | Investigating charge trapping in ferroelectric thin films through transient measurements |
| title_sort | investigating charge trapping in ferroelectric thin films through transient measurements |
| topic | ferroelectrics dielectrics hafnium zirconium oxide charge trapping electrical characterization polarization switching |
| url | https://www.frontiersin.org/articles/10.3389/fnano.2022.939822/full |
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