High-Quality <i>SiO</i><sub>2</sub>/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

High-Quality <i>SiO</i><sub>2</sub>/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Silicon oxide atomic layer deposition synthesis development over the last few years has open the route to its use as a dielectric within diamond electronics. Its great band-gap makes it a promising material for the fabrication of diamond–metal–oxide field effects transistor gates. Having a sufficien...

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Bibliographic Details
Main Authors: Jesús Cañas, Daniel F. Reyes, Alter Zakhtser, Christian Dussarrat, Takashi Teramoto, Marina Gutiérrez, Etienne Gheeraert
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Nanomaterials
Subjects:
silicon oxide
diamond
interface
band-gap
band-offset
EELS
Online Access:https://www.mdpi.com/2079-4991/12/23/4125

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