Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch
SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET tu...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10057389/ |
| _version_ | 1797861267250085888 |
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| author | Haihong Qin Sixuan Xie Zhenhua Ba Xiang Liu Wenming Chen Dafeng Fu Qian Xun |
| author_facet | Haihong Qin Sixuan Xie Zhenhua Ba Xiang Liu Wenming Chen Dafeng Fu Qian Xun |
| author_sort | Haihong Qin |
| collection | DOAJ |
| description | SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET turns off, the fast slew rate of drain source voltage causes the current spike in Si IGBT due to the effects of parasitic capacitance charging and carrier recombination, which will produce additional turn-off loss, thus affecting the overall efficiency and temperature rise of the converter. Based on the double pulse test circuit of SiC/Si hybrid switch, the mathematical model of the turn-off transient process is established. The effects of the remnant carrier recombination degree of Si IGBT, the turn-off speed of SiC MOSFET and the working conditions on the turn-off current spike of hybrid switch are evaluated. Although adjusting these parameters can reduce the turn-off current spike somewhat, additional losses will be introduced. Therefore, a new method to suppress the turn-off current spike is proposed to balance the power loss and current stress. |
| first_indexed | 2024-04-09T22:00:32Z |
| format | Article |
| id | doaj.art-2689dbcb082c472caeeff85dc39f7ad9 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-04-09T22:00:32Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-2689dbcb082c472caeeff85dc39f7ad92023-03-23T23:00:35ZengIEEEIEEE Access2169-35362023-01-0111268322684210.1109/ACCESS.2023.325139710057389Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid SwitchHaihong Qin0https://orcid.org/0000-0003-3415-9901Sixuan Xie1Zhenhua Ba2Xiang Liu3Wenming Chen4Dafeng Fu5Qian Xun6https://orcid.org/0000-0001-5344-5298Department of Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, ChinaDepartment of Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, ChinaDepartment of Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, ChinaDepartment of Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, ChinaDepartment of Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, ChinaDepartment of Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, ChinaDepartment of Electrical Engineering, Chalmers University of Technology, Gothenburg, SwedenSiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET turns off, the fast slew rate of drain source voltage causes the current spike in Si IGBT due to the effects of parasitic capacitance charging and carrier recombination, which will produce additional turn-off loss, thus affecting the overall efficiency and temperature rise of the converter. Based on the double pulse test circuit of SiC/Si hybrid switch, the mathematical model of the turn-off transient process is established. The effects of the remnant carrier recombination degree of Si IGBT, the turn-off speed of SiC MOSFET and the working conditions on the turn-off current spike of hybrid switch are evaluated. Although adjusting these parameters can reduce the turn-off current spike somewhat, additional losses will be introduced. Therefore, a new method to suppress the turn-off current spike is proposed to balance the power loss and current stress.https://ieeexplore.ieee.org/document/10057389/SiC MOSFET/Si IGBThybrid switchcurrent spikesuppression method |
| spellingShingle | Haihong Qin Sixuan Xie Zhenhua Ba Xiang Liu Wenming Chen Dafeng Fu Qian Xun Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch IEEE Access SiC MOSFET/Si IGBT hybrid switch current spike suppression method |
| title | Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch |
| title_full | Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch |
| title_fullStr | Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch |
| title_full_unstemmed | Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch |
| title_short | Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch |
| title_sort | evaluation and suppression method of turn off current spike for sic si hybrid switch |
| topic | SiC MOSFET/Si IGBT hybrid switch current spike suppression method |
| url | https://ieeexplore.ieee.org/document/10057389/ |
| work_keys_str_mv | AT haihongqin evaluationandsuppressionmethodofturnoffcurrentspikeforsicsihybridswitch AT sixuanxie evaluationandsuppressionmethodofturnoffcurrentspikeforsicsihybridswitch AT zhenhuaba evaluationandsuppressionmethodofturnoffcurrentspikeforsicsihybridswitch AT xiangliu evaluationandsuppressionmethodofturnoffcurrentspikeforsicsihybridswitch AT wenmingchen evaluationandsuppressionmethodofturnoffcurrentspikeforsicsihybridswitch AT dafengfu evaluationandsuppressionmethodofturnoffcurrentspikeforsicsihybridswitch AT qianxun evaluationandsuppressionmethodofturnoffcurrentspikeforsicsihybridswitch |