Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC
Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (4H-SiC) wafer. A generalized theoretical mode...
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| Format: | Article |
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MDPI AG
2021-05-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/11/6/626 |
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| author | Ying Chang Aixia Xiao Rubing Li Miaojing Wang Saisai He Mingyuan Sun Lizhong Wang Chuanyong Qu Wei Qiu |
| author_facet | Ying Chang Aixia Xiao Rubing Li Miaojing Wang Saisai He Mingyuan Sun Lizhong Wang Chuanyong Qu Wei Qiu |
| author_sort | Ying Chang |
| collection | DOAJ |
| description | Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (4H-SiC) wafer. A generalized theoretical model of polarized Raman intensity was established by considering the birefringence effect. The distributions of angle-resolved Raman intensities were achieved under normal and oblique backscattering configurations. Experiments were performed on a self-built angle-resolved Raman system, which verified the validity of the proposed model and achieved the identification of crystal orientations of the 4H-SiC sample. |
| first_indexed | 2024-03-10T10:49:31Z |
| format | Article |
| id | doaj.art-268bfe0254d7455f953d50296be358be |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T10:49:31Z |
| publishDate | 2021-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-268bfe0254d7455f953d50296be358be2023-11-21T22:17:39ZengMDPI AGCrystals2073-43522021-05-0111662610.3390/cryst11060626Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiCYing Chang0Aixia Xiao1Rubing Li2Miaojing Wang3Saisai He4Mingyuan Sun5Lizhong Wang6Chuanyong Qu7Wei Qiu8Tianjin Key Laboratory of Modern Engineering Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072, ChinaTianjin Key Laboratory of Modern Engineering Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072, ChinaTianjin Key Laboratory of Modern Engineering Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072, ChinaTianjin Key Laboratory of Modern Engineering Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072, ChinaTianjin Key Laboratory of Modern Engineering Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072, ChinaTianjin Key Laboratory of Modern Engineering Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072, ChinaMarketing Sector, Semicore Crystal Co., Ltd., Taiyuan 030028, ChinaTianjin Key Laboratory of Modern Engineering Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072, ChinaTianjin Key Laboratory of Modern Engineering Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072, ChinaRaman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (4H-SiC) wafer. A generalized theoretical model of polarized Raman intensity was established by considering the birefringence effect. The distributions of angle-resolved Raman intensities were achieved under normal and oblique backscattering configurations. Experiments were performed on a self-built angle-resolved Raman system, which verified the validity of the proposed model and achieved the identification of crystal orientations of the 4H-SiC sample.https://www.mdpi.com/2073-4352/11/6/626Raman intensityangle-resolved Ramanpolarization Ramanuniaxial crystal 4H-SiC |
| spellingShingle | Ying Chang Aixia Xiao Rubing Li Miaojing Wang Saisai He Mingyuan Sun Lizhong Wang Chuanyong Qu Wei Qiu Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC Crystals Raman intensity angle-resolved Raman polarization Raman uniaxial crystal 4H-SiC |
| title | Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC |
| title_full | Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC |
| title_fullStr | Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC |
| title_full_unstemmed | Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC |
| title_short | Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC |
| title_sort | angle resolved intensity of polarized micro raman spectroscopy for 4h sic |
| topic | Raman intensity angle-resolved Raman polarization Raman uniaxial crystal 4H-SiC |
| url | https://www.mdpi.com/2073-4352/11/6/626 |
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