Nonvolatile Analog Switch for Low-Voltage Applications
In this paper, a nonvolatile switch based on n-type floating-gate transistors is described. The switch states are programmed through the memory cell floating-gate voltage, allowing higher levels than the application supply. Furthermore, due to its nonvolatile nature, the power consumption is reduced...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-03-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/6/736 |
| _version_ | 1797540609019346944 |
|---|---|
| author | Giorgiana-Catalina Ilie (Chiranu) Cristian Tudoran Otilia Neagoe Florin Draghici Gheorghe Brezeanu |
| author_facet | Giorgiana-Catalina Ilie (Chiranu) Cristian Tudoran Otilia Neagoe Florin Draghici Gheorghe Brezeanu |
| author_sort | Giorgiana-Catalina Ilie (Chiranu) |
| collection | DOAJ |
| description | In this paper, a nonvolatile switch based on n-type floating-gate transistors is described. The switch states are programmed through the memory cell floating-gate voltage, allowing higher levels than the application supply. Furthermore, due to its nonvolatile nature, the power consumption is reduced. The on-state resistance, which does not depend on the supply voltage, is one of the greatest advantages of this type of switch in comparison to conventional switches. This benefit can be successfully exploited in low-voltage applications. The switch on-resistance can be increased without the need for increasing the switch area. The characteristics of the proposed switch were confirmed by the experimental results obtained on a test chip fabricated in a 0.18 µm EEPROM process. Measured on-resistance values between 45 and 70 Ω were obtained for a floating-gate voltage of 6.2 V and input source levels below 2 V. The required programming voltage was 18 V. The maximum off-state leakage current was measured at 5 nA. |
| first_indexed | 2024-03-10T13:03:37Z |
| format | Article |
| id | doaj.art-26b4796c86c24fc2aa2cfc3a5b267322 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T13:03:37Z |
| publishDate | 2021-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-26b4796c86c24fc2aa2cfc3a5b2673222023-11-21T11:16:22ZengMDPI AGElectronics2079-92922021-03-0110673610.3390/electronics10060736Nonvolatile Analog Switch for Low-Voltage ApplicationsGiorgiana-Catalina Ilie (Chiranu)0Cristian Tudoran1Otilia Neagoe2Florin Draghici3Gheorghe Brezeanu4ON Semiconductor, Power Solutions Group, 020983 Bucharest, RomaniaON Semiconductor, Power Solutions Group, 020983 Bucharest, RomaniaFormerly of ON Semiconductor, Power Solutions Group, 020983 Bucharest, RomaniaON Semiconductor, Power Solutions Group, 020983 Bucharest, RomaniaFaculty of Electronics, Telecommunications and Information Technology, University Politehnica of Bucharest, 061071 Bucharest, RomaniaIn this paper, a nonvolatile switch based on n-type floating-gate transistors is described. The switch states are programmed through the memory cell floating-gate voltage, allowing higher levels than the application supply. Furthermore, due to its nonvolatile nature, the power consumption is reduced. The on-state resistance, which does not depend on the supply voltage, is one of the greatest advantages of this type of switch in comparison to conventional switches. This benefit can be successfully exploited in low-voltage applications. The switch on-resistance can be increased without the need for increasing the switch area. The characteristics of the proposed switch were confirmed by the experimental results obtained on a test chip fabricated in a 0.18 µm EEPROM process. Measured on-resistance values between 45 and 70 Ω were obtained for a floating-gate voltage of 6.2 V and input source levels below 2 V. The required programming voltage was 18 V. The maximum off-state leakage current was measured at 5 nA.https://www.mdpi.com/2079-9292/10/6/736analog switchfloating-gate transistorFowler–Nordheim tunnelinglow voltage |
| spellingShingle | Giorgiana-Catalina Ilie (Chiranu) Cristian Tudoran Otilia Neagoe Florin Draghici Gheorghe Brezeanu Nonvolatile Analog Switch for Low-Voltage Applications Electronics analog switch floating-gate transistor Fowler–Nordheim tunneling low voltage |
| title | Nonvolatile Analog Switch for Low-Voltage Applications |
| title_full | Nonvolatile Analog Switch for Low-Voltage Applications |
| title_fullStr | Nonvolatile Analog Switch for Low-Voltage Applications |
| title_full_unstemmed | Nonvolatile Analog Switch for Low-Voltage Applications |
| title_short | Nonvolatile Analog Switch for Low-Voltage Applications |
| title_sort | nonvolatile analog switch for low voltage applications |
| topic | analog switch floating-gate transistor Fowler–Nordheim tunneling low voltage |
| url | https://www.mdpi.com/2079-9292/10/6/736 |
| work_keys_str_mv | AT giorgianacatalinailiechiranu nonvolatileanalogswitchforlowvoltageapplications AT cristiantudoran nonvolatileanalogswitchforlowvoltageapplications AT otilianeagoe nonvolatileanalogswitchforlowvoltageapplications AT florindraghici nonvolatileanalogswitchforlowvoltageapplications AT gheorghebrezeanu nonvolatileanalogswitchforlowvoltageapplications |