A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer
Micro-electromechanical system (MEMS) accelerometers are widely used in the inertial navigation and nanosatellites field. A high-performance digital interface circuit for a high-Q MEMS micro-accelerometer is presented in this work. The mechanical noise of the MEMS accelerometer is decreased by the a...
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| Format: | Article |
| Language: | English |
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MDPI AG
2018-12-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/9/12/675 |
| _version_ | 1811268765565845504 |
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| author | Xiangyu Li Jianping Hu Xiaowei Liu |
| author_facet | Xiangyu Li Jianping Hu Xiaowei Liu |
| author_sort | Xiangyu Li |
| collection | DOAJ |
| description | Micro-electromechanical system (MEMS) accelerometers are widely used in the inertial navigation and nanosatellites field. A high-performance digital interface circuit for a high-Q MEMS micro-accelerometer is presented in this work. The mechanical noise of the MEMS accelerometer is decreased by the application of a vacuum-packaged sensitive element. The quantization noise in the baseband of the interface circuit is greatly suppressed by a 4th-order loop shaping. The digital output is attained by the interface circuit based on a low-noise front-end charge-amplifier and a 4th-order Sigma-Delta (ΣΔ) modulator. The stability of high-order ΣΔ was studied by the root locus method. The gain of the integrators was reduced by using the proportional scaling technique. The low-noise front-end detection circuit was proposed with the correlated double sampling (CDS) technique to eliminate the 1/<i>f</i> noise and offset. The digital interface circuit was implemented by 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. The high-performance digital accelerometer system was implemented by double chip integration and the active interface circuit area was about 3.3 mm × 3.5 mm. The high-Q MEMS accelerometer system consumed 10 mW from a single 5 V supply at a sampling frequency of 250 kHz. The micro-accelerometer system could achieve a third harmonic distortion of −98 dB and an average noise floor in low-frequency range of less than −140 dBV; a resolution of 0.48 μg/Hz<sup>1/2</sup> (@300 Hz); a bias stability of 18 μg by the Allen variance program in MATLAB. |
| first_indexed | 2024-04-12T21:28:49Z |
| format | Article |
| id | doaj.art-26e5ec2cba524a1fa3e52c0e474d0457 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-04-12T21:28:49Z |
| publishDate | 2018-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-26e5ec2cba524a1fa3e52c0e474d04572022-12-22T03:16:05ZengMDPI AGMicromachines2072-666X2018-12-0191267510.3390/mi9120675mi9120675A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System AccelerometerXiangyu Li0Jianping Hu1Xiaowei Liu2Faculty of Information Science and Technology, Ningbo University, Ningbo 315211, ChinaFaculty of Information Science and Technology, Ningbo University, Ningbo 315211, ChinaMEMS Center, Harbin Institute of Technology, Harbin 150001, ChinaMicro-electromechanical system (MEMS) accelerometers are widely used in the inertial navigation and nanosatellites field. A high-performance digital interface circuit for a high-Q MEMS micro-accelerometer is presented in this work. The mechanical noise of the MEMS accelerometer is decreased by the application of a vacuum-packaged sensitive element. The quantization noise in the baseband of the interface circuit is greatly suppressed by a 4th-order loop shaping. The digital output is attained by the interface circuit based on a low-noise front-end charge-amplifier and a 4th-order Sigma-Delta (ΣΔ) modulator. The stability of high-order ΣΔ was studied by the root locus method. The gain of the integrators was reduced by using the proportional scaling technique. The low-noise front-end detection circuit was proposed with the correlated double sampling (CDS) technique to eliminate the 1/<i>f</i> noise and offset. The digital interface circuit was implemented by 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. The high-performance digital accelerometer system was implemented by double chip integration and the active interface circuit area was about 3.3 mm × 3.5 mm. The high-Q MEMS accelerometer system consumed 10 mW from a single 5 V supply at a sampling frequency of 250 kHz. The micro-accelerometer system could achieve a third harmonic distortion of −98 dB and an average noise floor in low-frequency range of less than −140 dBV; a resolution of 0.48 μg/Hz<sup>1/2</sup> (@300 Hz); a bias stability of 18 μg by the Allen variance program in MATLAB.https://www.mdpi.com/2072-666X/9/12/675MEMSinterface circuithigh-Q capacitive accelerometerSigma-Delta |
| spellingShingle | Xiangyu Li Jianping Hu Xiaowei Liu A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer Micromachines MEMS interface circuit high-Q capacitive accelerometer Sigma-Delta |
| title | A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer |
| title_full | A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer |
| title_fullStr | A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer |
| title_full_unstemmed | A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer |
| title_short | A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer |
| title_sort | high performance digital interface circuit for a high q micro electromechanical system accelerometer |
| topic | MEMS interface circuit high-Q capacitive accelerometer Sigma-Delta |
| url | https://www.mdpi.com/2072-666X/9/12/675 |
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