Fabrication of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanotubes via Sacrificial GaSb-Nanowire Templates
<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanostructures are attractive wide-band-gap semiconductor materials as they exhibit promising photoelectric properties and potential applications. Despite the extensive efforts on <i>β</i>-Ga<sub>2</sub>...
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MDPI AG
2023-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/20/2756 |
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| author | Lei Shangguan Long-Bing He Sheng-Pan Dong Yu-Tian Gao Qian Sun Jiong-Hao Zhu Hua Hong Chao Zhu Zai-Xing Yang Li-Tao Sun |
| author_facet | Lei Shangguan Long-Bing He Sheng-Pan Dong Yu-Tian Gao Qian Sun Jiong-Hao Zhu Hua Hong Chao Zhu Zai-Xing Yang Li-Tao Sun |
| author_sort | Lei Shangguan |
| collection | DOAJ |
| description | <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanostructures are attractive wide-band-gap semiconductor materials as they exhibit promising photoelectric properties and potential applications. Despite the extensive efforts on <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanowires, investigations into <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotubes are rare since the tubular structures are hard to synthesize. In this paper, we report a facile method for fabricating <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotubes using pre-synthesized GaSb nanowires as sacrificial templates. Through a two-step heating-treatment strategy, the GaSb nanowires are partially oxidized to form <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> shells, and then, the residual inner parts are removed subsequently in vacuum conditions, yielding delicate hollow <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotubes. The length, diameter, and thickness of the nanotubes can be customized by using different GaSb nanowires and heating parameters. In situ transmission electron microscopic heating experiments are performed to reveal the transformation dynamics of the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotubes, while the Kirkendall effect and the sublimation process are found to be critical. Moreover, photoelectric tests are carried out on the obtained <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotubes. A photoresponsivity of ~25.9 A/W and a detectivity of ~5.6 × 10<sup>11</sup> Jones have been achieved with a single-<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-nanotube device under an excitation wavelength of 254 nm. |
| first_indexed | 2024-03-10T21:00:23Z |
| format | Article |
| id | doaj.art-271a107c86634e7db243865da32d1e6c |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T21:00:23Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-271a107c86634e7db243865da32d1e6c2023-11-19T17:35:39ZengMDPI AGNanomaterials2079-49912023-10-011320275610.3390/nano13202756Fabrication of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanotubes via Sacrificial GaSb-Nanowire TemplatesLei Shangguan0Long-Bing He1Sheng-Pan Dong2Yu-Tian Gao3Qian Sun4Jiong-Hao Zhu5Hua Hong6Chao Zhu7Zai-Xing Yang8Li-Tao Sun9SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, ChinaSEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, ChinaSEU-AMTE Collaborative Center for Atomic Layer Deposition and Etching, Southeast University, Wuxi 214000, ChinaSEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, ChinaSEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, ChinaSEU-AMTE Collaborative Center for Atomic Layer Deposition and Etching, Southeast University, Wuxi 214000, ChinaSEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, ChinaSEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanostructures are attractive wide-band-gap semiconductor materials as they exhibit promising photoelectric properties and potential applications. Despite the extensive efforts on <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanowires, investigations into <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotubes are rare since the tubular structures are hard to synthesize. In this paper, we report a facile method for fabricating <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotubes using pre-synthesized GaSb nanowires as sacrificial templates. Through a two-step heating-treatment strategy, the GaSb nanowires are partially oxidized to form <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> shells, and then, the residual inner parts are removed subsequently in vacuum conditions, yielding delicate hollow <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotubes. The length, diameter, and thickness of the nanotubes can be customized by using different GaSb nanowires and heating parameters. In situ transmission electron microscopic heating experiments are performed to reveal the transformation dynamics of the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotubes, while the Kirkendall effect and the sublimation process are found to be critical. Moreover, photoelectric tests are carried out on the obtained <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotubes. A photoresponsivity of ~25.9 A/W and a detectivity of ~5.6 × 10<sup>11</sup> Jones have been achieved with a single-<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-nanotube device under an excitation wavelength of 254 nm.https://www.mdpi.com/2079-4991/13/20/2756<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>nanotubenanowire templateKirkendall effectelectrical property |
| spellingShingle | Lei Shangguan Long-Bing He Sheng-Pan Dong Yu-Tian Gao Qian Sun Jiong-Hao Zhu Hua Hong Chao Zhu Zai-Xing Yang Li-Tao Sun Fabrication of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanotubes via Sacrificial GaSb-Nanowire Templates Nanomaterials <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotube nanowire template Kirkendall effect electrical property |
| title | Fabrication of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanotubes via Sacrificial GaSb-Nanowire Templates |
| title_full | Fabrication of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanotubes via Sacrificial GaSb-Nanowire Templates |
| title_fullStr | Fabrication of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanotubes via Sacrificial GaSb-Nanowire Templates |
| title_full_unstemmed | Fabrication of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanotubes via Sacrificial GaSb-Nanowire Templates |
| title_short | Fabrication of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanotubes via Sacrificial GaSb-Nanowire Templates |
| title_sort | fabrication of i β i ga sub 2 sub o sub 3 sub nanotubes via sacrificial gasb nanowire templates |
| topic | <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanotube nanowire template Kirkendall effect electrical property |
| url | https://www.mdpi.com/2079-4991/13/20/2756 |
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