Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate

Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate

Recently, tin oxide (SnO<sub>2</sub>) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (V<sub>O</sub>) concentratio...

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Bibliographic Details
Main Authors: Ziyan He, Xu Zhang, Xiaoqin Wei, Dongxiang Luo, Honglong Ning, Qiannan Ye, Renxu Wu, Yao Guo, Rihui Yao, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Membranes
Subjects:
tetraethyl orthosilicate
tin oxide
thin-film transistors
oxygen vacancy
Online Access:https://www.mdpi.com/2077-0375/12/6/590

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