Electronic Modulation of Semimetallic Electrode for 2D van der Waals Devices
The 2D semimetallic electrodes have been employed to show outstanding contact properties with 2D semiconducting transition‐metal dichalcogenides (TMDCs) channel, leading to large enhancement of 2D transistor and phototransistor performance. Herein, an innovative concept is established for a unique 2...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-05-01
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| Series: | Small Structures |
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| Online Access: | https://doi.org/10.1002/sstr.202200274 |
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| author | Taehun Kim Jungmoon Lim Junsung Byeon Yuljae Cho Woojong Kim Jinpyo Hong Su Jin Heo Jae Eun Jang Byung-Sung Kim John Hong Sangyeon Pak SeungNam Cha |
| author_facet | Taehun Kim Jungmoon Lim Junsung Byeon Yuljae Cho Woojong Kim Jinpyo Hong Su Jin Heo Jae Eun Jang Byung-Sung Kim John Hong Sangyeon Pak SeungNam Cha |
| author_sort | Taehun Kim |
| collection | DOAJ |
| description | The 2D semimetallic electrodes have been employed to show outstanding contact properties with 2D semiconducting transition‐metal dichalcogenides (TMDCs) channel, leading to large enhancement of 2D transistor and phototransistor performance. Herein, an innovative concept is established for a unique 2D semimetallic electrode‐2D TMDC channel (2D–2D) device configuration where the electronic structures of 2D semimetallic electrodes are systematically modulated to improve the contact properties with 2D monolayer molybdenum disulfide (MoS2) channel. The 2D semimetallic copper sulfide (CuS) electrodes are doped with iodine atoms by a direct exposure of iodine gas. The contact properties and charge‐transport behavior in the 2D–2D field‐effect transistors (FETs) are highly improved, which is attributed to the favorable energy band alignment and associated material properties between the iodine‐doped CuS (CuS–I) electrodes and 2D channel. The 2D–2D FETs show a high on current, high on/off ratio, and twofold improvement in mobility. Furthermore, 2D–2D phototransistors and flexible/transparent photodetectors are fabricated using the CuS–I/MoS2, which also performed outstanding photoresponsivity characteristics and mechanical durability under external bending strain conditions. These findings demonstrate a promising pathway that under the 2D–2D configuration, the electronic modulation by the iodine atoms may enable the development of future 2D electronic applications. |
| first_indexed | 2024-03-12T21:51:55Z |
| format | Article |
| id | doaj.art-273d688a293e444b9744c91f0407dfa9 |
| institution | Directory Open Access Journal |
| issn | 2688-4062 |
| language | English |
| last_indexed | 2024-03-12T21:51:55Z |
| publishDate | 2023-05-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Structures |
| spelling | doaj.art-273d688a293e444b9744c91f0407dfa92023-07-26T01:36:10ZengWiley-VCHSmall Structures2688-40622023-05-0145n/an/a10.1002/sstr.202200274Electronic Modulation of Semimetallic Electrode for 2D van der Waals DevicesTaehun Kim0Jungmoon Lim1Junsung Byeon2Yuljae Cho3Woojong Kim4Jinpyo Hong5Su Jin Heo6Jae Eun Jang7Byung-Sung Kim8John Hong9Sangyeon Pak10SeungNam Cha11Department of Physics Sungkyunkwan University (SKKU) Suwon Gyeonggi-do 16419 Republic of KoreaDepartment of Physics Sungkyunkwan University (SKKU) Suwon Gyeonggi-do 16419 Republic of KoreaDepartment of Physics Sungkyunkwan University (SKKU) Suwon Gyeonggi-do 16419 Republic of KoreaUniversity of Michigan—Shanghai Jiao Tong University Joint Institute Shanghai Jiao Tong University Minhang District Shanghai 200240 P. R. ChinaDepartment of Physics and Division of Nanoscale Semiconductor Engineering Hanyang University Seoul 04763 Republic of KoreaDepartment of Physics and Division of Nanoscale Semiconductor Engineering Hanyang University Seoul 04763 Republic of KoreaDepartment of Electrical Engineering and Computer Science Daegu Gyeongbuk Institute of Science & Technology (DGIST) Daegu 42988 Republic of KoreaDepartment of Electrical Engineering and Computer Science Daegu Gyeongbuk Institute of Science & Technology (DGIST) Daegu 42988 Republic of KoreaDepartment of Engineering Science University of Oxford Oxford OX1 3PJ UKSchool of Materials Science and Engineering Kookmin University Seoul 02707 Republic of KoreaSchool of Electronic and Electrical Engineering Hongik University Seoul 04066 Republic of KoreaDepartment of Physics Sungkyunkwan University (SKKU) Suwon Gyeonggi-do 16419 Republic of KoreaThe 2D semimetallic electrodes have been employed to show outstanding contact properties with 2D semiconducting transition‐metal dichalcogenides (TMDCs) channel, leading to large enhancement of 2D transistor and phototransistor performance. Herein, an innovative concept is established for a unique 2D semimetallic electrode‐2D TMDC channel (2D–2D) device configuration where the electronic structures of 2D semimetallic electrodes are systematically modulated to improve the contact properties with 2D monolayer molybdenum disulfide (MoS2) channel. The 2D semimetallic copper sulfide (CuS) electrodes are doped with iodine atoms by a direct exposure of iodine gas. The contact properties and charge‐transport behavior in the 2D–2D field‐effect transistors (FETs) are highly improved, which is attributed to the favorable energy band alignment and associated material properties between the iodine‐doped CuS (CuS–I) electrodes and 2D channel. The 2D–2D FETs show a high on current, high on/off ratio, and twofold improvement in mobility. Furthermore, 2D–2D phototransistors and flexible/transparent photodetectors are fabricated using the CuS–I/MoS2, which also performed outstanding photoresponsivity characteristics and mechanical durability under external bending strain conditions. These findings demonstrate a promising pathway that under the 2D–2D configuration, the electronic modulation by the iodine atoms may enable the development of future 2D electronic applications.https://doi.org/10.1002/sstr.202200274contact engineeringCuS electrodeselectrode dopantsMoS2 monolayersohmic contactssemimetallic electrodes |
| spellingShingle | Taehun Kim Jungmoon Lim Junsung Byeon Yuljae Cho Woojong Kim Jinpyo Hong Su Jin Heo Jae Eun Jang Byung-Sung Kim John Hong Sangyeon Pak SeungNam Cha Electronic Modulation of Semimetallic Electrode for 2D van der Waals Devices Small Structures contact engineering CuS electrodes electrode dopants MoS2 monolayers ohmic contacts semimetallic electrodes |
| title | Electronic Modulation of Semimetallic Electrode for 2D van der Waals Devices |
| title_full | Electronic Modulation of Semimetallic Electrode for 2D van der Waals Devices |
| title_fullStr | Electronic Modulation of Semimetallic Electrode for 2D van der Waals Devices |
| title_full_unstemmed | Electronic Modulation of Semimetallic Electrode for 2D van der Waals Devices |
| title_short | Electronic Modulation of Semimetallic Electrode for 2D van der Waals Devices |
| title_sort | electronic modulation of semimetallic electrode for 2d van der waals devices |
| topic | contact engineering CuS electrodes electrode dopants MoS2 monolayers ohmic contacts semimetallic electrodes |
| url | https://doi.org/10.1002/sstr.202200274 |
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