Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal...
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2018-09-01
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| Online Access: | http://www.mdpi.com/1996-1944/11/9/1736 |
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| author | George Christian Menno Kappers Fabien Massabuau Colin Humphreys Rachel Oliver Philip Dawson |
| author_facet | George Christian Menno Kappers Fabien Massabuau Colin Humphreys Rachel Oliver Philip Dawson |
| author_sort | George Christian |
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| description | In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal quantum efficiency can be dominated by thermionic emission from the wells. This can occur because the radiative recombination rate in InGaN polar quantum wells can be low due to the built-in electric field across the quantum well which allows the thermionic emission process to compete effectively at room temperature limiting the internal quantum efficiency. In the structures that we discuss here, the radiative recombination rate is increased due to the effects of the Si-doped underlayer which reduces the electric field across the quantum wells. This results in the effect of thermionic emission being largely eliminated to such an extent that the internal quantum efficiency at room temperature is independent of the number of quantum wells. |
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| language | English |
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| spelling | doaj.art-275fac9845594323a4508626c6e229b52022-12-22T02:42:14ZengMDPI AGMaterials1996-19442018-09-01119173610.3390/ma11091736ma11091736Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum WellsGeorge Christian0Menno Kappers1Fabien Massabuau2Colin Humphreys3Rachel Oliver4Philip Dawson5School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UKDepartment of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UKDepartment of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UKDepartment of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UKDepartment of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UKSchool of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UKIn this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal quantum efficiency can be dominated by thermionic emission from the wells. This can occur because the radiative recombination rate in InGaN polar quantum wells can be low due to the built-in electric field across the quantum well which allows the thermionic emission process to compete effectively at room temperature limiting the internal quantum efficiency. In the structures that we discuss here, the radiative recombination rate is increased due to the effects of the Si-doped underlayer which reduces the electric field across the quantum wells. This results in the effect of thermionic emission being largely eliminated to such an extent that the internal quantum efficiency at room temperature is independent of the number of quantum wells.http://www.mdpi.com/1996-1944/11/9/1736photoluminescenceInGaNunderlayerquantum wellradiative lifetime |
| spellingShingle | George Christian Menno Kappers Fabien Massabuau Colin Humphreys Rachel Oliver Philip Dawson Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells Materials photoluminescence InGaN underlayer quantum well radiative lifetime |
| title | Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells |
| title_full | Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells |
| title_fullStr | Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells |
| title_full_unstemmed | Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells |
| title_short | Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells |
| title_sort | effects of a si doped ingan underlayer on the optical properties of ingan gan quantum well structures with different numbers of quantum wells |
| topic | photoluminescence InGaN underlayer quantum well radiative lifetime |
| url | http://www.mdpi.com/1996-1944/11/9/1736 |
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