High‐Quality Graphene Using Boudouard Reaction

Abstract Following the game‐changing high‐pressure CO (HiPco) process that established the first facile route toward large‐scale production of single‐walled carbon nanotubes, CO synthesis of cm‐sized graphene crystals of ultra‐high purity grown during tens of minutes is proposed. The Boudouard react...

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Main Authors: Artem K. Grebenko, Dmitry V. Krasnikov, Anton V. Bubis, Vasily S. Stolyarov, Denis V. Vyalikh, Anna A. Makarova, Alexander Fedorov, Aisuluu Aitkulova, Alena A. Alekseeva, Evgeniia Gilshtein, Zakhar Bedran, Alexander N. Shmakov, Liudmila Alyabyeva, Rais N. Mozhchil, Andrey M. Ionov, Boris P. Gorshunov, Kari Laasonen, Vitaly Podzorov, Albert G. Nasibulin
Format: Article
Language:English
Published: Wiley 2022-04-01
Series:Advanced Science
Subjects:
Online Access:https://doi.org/10.1002/advs.202200217
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author Artem K. Grebenko
Dmitry V. Krasnikov
Anton V. Bubis
Vasily S. Stolyarov
Denis V. Vyalikh
Anna A. Makarova
Alexander Fedorov
Aisuluu Aitkulova
Alena A. Alekseeva
Evgeniia Gilshtein
Zakhar Bedran
Alexander N. Shmakov
Liudmila Alyabyeva
Rais N. Mozhchil
Andrey M. Ionov
Boris P. Gorshunov
Kari Laasonen
Vitaly Podzorov
Albert G. Nasibulin
author_facet Artem K. Grebenko
Dmitry V. Krasnikov
Anton V. Bubis
Vasily S. Stolyarov
Denis V. Vyalikh
Anna A. Makarova
Alexander Fedorov
Aisuluu Aitkulova
Alena A. Alekseeva
Evgeniia Gilshtein
Zakhar Bedran
Alexander N. Shmakov
Liudmila Alyabyeva
Rais N. Mozhchil
Andrey M. Ionov
Boris P. Gorshunov
Kari Laasonen
Vitaly Podzorov
Albert G. Nasibulin
author_sort Artem K. Grebenko
collection DOAJ
description Abstract Following the game‐changing high‐pressure CO (HiPco) process that established the first facile route toward large‐scale production of single‐walled carbon nanotubes, CO synthesis of cm‐sized graphene crystals of ultra‐high purity grown during tens of minutes is proposed. The Boudouard reaction serves for the first time to produce individual monolayer structures on the surface of a metal catalyst, thereby providing a chemical vapor deposition technique free from molecular and atomic hydrogen as well as vacuum conditions. This approach facilitates inhibition of the graphene nucleation from the CO/CO2 mixture and maintains a high growth rate of graphene seeds reaching large‐scale monocrystals. Unique features of the Boudouard reaction coupled with CO‐driven catalyst engineering ensure not only suppression of the second layer growth but also provide a simple and reliable technique for surface cleaning. Aside from being a novel carbon source, carbon monoxide ensures peculiar modification of catalyst and in general opens avenues for breakthrough graphene‐catalyst composite production.
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spelling doaj.art-278ea67c700d43d78fa21c3452140b3d2022-12-22T00:08:14ZengWileyAdvanced Science2198-38442022-04-01912n/an/a10.1002/advs.202200217High‐Quality Graphene Using Boudouard ReactionArtem K. Grebenko0Dmitry V. Krasnikov1Anton V. Bubis2Vasily S. Stolyarov3Denis V. Vyalikh4Anna A. Makarova5Alexander Fedorov6Aisuluu Aitkulova7Alena A. Alekseeva8Evgeniia Gilshtein9Zakhar Bedran10Alexander N. Shmakov11Liudmila Alyabyeva12Rais N. Mozhchil13Andrey M. Ionov14Boris P. Gorshunov15Kari Laasonen16Vitaly Podzorov17Albert G. Nasibulin18Skolkovo Institute of Science and Technology Nobel str. 3 Moscow 121205 RussiaSkolkovo Institute of Science and Technology Nobel str. 3 Moscow 121205 RussiaSkolkovo Institute of Science and Technology Nobel str. 3 Moscow 121205 RussiaMoscow Institute of Physics and Technology Institute Lane 9 Dolgoprudny RussiaDonostia International Physics Center (DIPC) Donostia‐San Sebastián 20018 SpainPhysikalische Chemie Institut für Chemie und Biochemie Freie Universität Berlin Arnimallee 22 Berlin 14195 GermanyIFW Dresden POB 270116 Dresden D‐01171 GermanySkolkovo Institute of Science and Technology Nobel str. 3 Moscow 121205 RussiaSkolkovo Institute of Science and Technology Nobel str. 3 Moscow 121205 RussiaSkolkovo Institute of Science and Technology Nobel str. 3 Moscow 121205 RussiaMoscow Institute of Physics and Technology Institute Lane 9 Dolgoprudny RussiaBoreskov Institute of Catalysis SB RAS Novosibirsk 630090 RussiaMoscow Institute of Physics and Technology Institute Lane 9 Dolgoprudny RussiaInsitute of Solid State Physics (RAS) Academician Ossupyan str. 2 Chernogolovka RussiaInsitute of Solid State Physics (RAS) Academician Ossupyan str. 2 Chernogolovka RussiaMoscow Institute of Physics and Technology Institute Lane 9 Dolgoprudny RussiaAalto University P.O. Box 16100 Aalto FI‐00076 FinlandDepartment of Physics Rutgers University Piscataway NJ 08854 USASkolkovo Institute of Science and Technology Nobel str. 3 Moscow 121205 RussiaAbstract Following the game‐changing high‐pressure CO (HiPco) process that established the first facile route toward large‐scale production of single‐walled carbon nanotubes, CO synthesis of cm‐sized graphene crystals of ultra‐high purity grown during tens of minutes is proposed. The Boudouard reaction serves for the first time to produce individual monolayer structures on the surface of a metal catalyst, thereby providing a chemical vapor deposition technique free from molecular and atomic hydrogen as well as vacuum conditions. This approach facilitates inhibition of the graphene nucleation from the CO/CO2 mixture and maintains a high growth rate of graphene seeds reaching large‐scale monocrystals. Unique features of the Boudouard reaction coupled with CO‐driven catalyst engineering ensure not only suppression of the second layer growth but also provide a simple and reliable technique for surface cleaning. Aside from being a novel carbon source, carbon monoxide ensures peculiar modification of catalyst and in general opens avenues for breakthrough graphene‐catalyst composite production.https://doi.org/10.1002/advs.202200217Boudouard reactioncarbon monoxidecopperchemical vapor depositiongraphene
spellingShingle Artem K. Grebenko
Dmitry V. Krasnikov
Anton V. Bubis
Vasily S. Stolyarov
Denis V. Vyalikh
Anna A. Makarova
Alexander Fedorov
Aisuluu Aitkulova
Alena A. Alekseeva
Evgeniia Gilshtein
Zakhar Bedran
Alexander N. Shmakov
Liudmila Alyabyeva
Rais N. Mozhchil
Andrey M. Ionov
Boris P. Gorshunov
Kari Laasonen
Vitaly Podzorov
Albert G. Nasibulin
High‐Quality Graphene Using Boudouard Reaction
Advanced Science
Boudouard reaction
carbon monoxide
copper
chemical vapor deposition
graphene
title High‐Quality Graphene Using Boudouard Reaction
title_full High‐Quality Graphene Using Boudouard Reaction
title_fullStr High‐Quality Graphene Using Boudouard Reaction
title_full_unstemmed High‐Quality Graphene Using Boudouard Reaction
title_short High‐Quality Graphene Using Boudouard Reaction
title_sort high quality graphene using boudouard reaction
topic Boudouard reaction
carbon monoxide
copper
chemical vapor deposition
graphene
url https://doi.org/10.1002/advs.202200217
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