Highly Bi-doped Cu thin films with large spin-mixing conductance
The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger values are predicted for larger Bi doping. In this work, we...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2018-10-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5049944 |
| _version_ | 1811330566998458368 |
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| author | Sandra Ruiz-Gómez Aída Serrano Rubén Guerrero Manuel Muñoz Irene Lucas Michael Foerster Lucia Aballe José F. Marco Mario Amado Lauren McKenzie-Sell Angelo di Bernardo Jason W. A. Robinson Miguel Ángel González Barrio Arantzazu Mascaraque Lucas Pérez |
| author_facet | Sandra Ruiz-Gómez Aída Serrano Rubén Guerrero Manuel Muñoz Irene Lucas Michael Foerster Lucia Aballe José F. Marco Mario Amado Lauren McKenzie-Sell Angelo di Bernardo Jason W. A. Robinson Miguel Ángel González Barrio Arantzazu Mascaraque Lucas Pérez |
| author_sort | Sandra Ruiz-Gómez |
| collection | DOAJ |
| description | The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger values are predicted for larger Bi doping. In this work, we demonstrate the possibility of doping Cu with up to 10% of Bi atoms without evidence of Bi surface segregation or cluster formation. In addition, YIG/BiCu structures have been grown, showing a spin mixing conductance larger that the one shown by similar Pt/YIG structures, reflecting the potentiality of these new materials. |
| first_indexed | 2024-04-13T16:04:11Z |
| format | Article |
| id | doaj.art-27a8b0329d9c46ea97391aa9d2db3615 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-13T16:04:11Z |
| publishDate | 2018-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-27a8b0329d9c46ea97391aa9d2db36152022-12-22T02:40:26ZengAIP Publishing LLCAPL Materials2166-532X2018-10-01610101107101107-810.1063/1.5049944010810APMHighly Bi-doped Cu thin films with large spin-mixing conductanceSandra Ruiz-Gómez0Aída Serrano1Rubén Guerrero2Manuel Muñoz3Irene Lucas4Michael Foerster5Lucia Aballe6José F. Marco7Mario Amado8Lauren McKenzie-Sell9Angelo di Bernardo10Jason W. A. Robinson11Miguel Ángel González Barrio12Arantzazu Mascaraque13Lucas Pérez14Departamento de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid, SpainSpLine, Spanish CRG BM25 Beamline, ESRF, 38000 Grenoble, FranceInstituto Madrileño de Estudios Avanzados, IMDEA Nanociencia, 28049 Madrid, SpainInstituto de Micro y Nanotecnología (CNM-CSIC), PTM, 28760 Tres Cantos, Madrid, SpainDepartamento de Física de la Materia Condensada, Universidad de Zaragoza, Pedro Cerbuna, 12, 50009 Zaragoza, SpainAlba Synchrotron Light Facility, CELLS, Carrer de la Llum, 2-23, E-08290 Bellaterra, SpainAlba Synchrotron Light Facility, CELLS, Carrer de la Llum, 2-23, E-08290 Bellaterra, SpainInstituto de Química Física Rocasolano, CSIC, Calle de Serrano, 119, 28006 Madrid, SpainDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United KingdomDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United KingdomDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United KingdomDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United KingdomDepartamento de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid, SpainDepartamento de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid, SpainDepartamento de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid, SpainThe spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger values are predicted for larger Bi doping. In this work, we demonstrate the possibility of doping Cu with up to 10% of Bi atoms without evidence of Bi surface segregation or cluster formation. In addition, YIG/BiCu structures have been grown, showing a spin mixing conductance larger that the one shown by similar Pt/YIG structures, reflecting the potentiality of these new materials.http://dx.doi.org/10.1063/1.5049944 |
| spellingShingle | Sandra Ruiz-Gómez Aída Serrano Rubén Guerrero Manuel Muñoz Irene Lucas Michael Foerster Lucia Aballe José F. Marco Mario Amado Lauren McKenzie-Sell Angelo di Bernardo Jason W. A. Robinson Miguel Ángel González Barrio Arantzazu Mascaraque Lucas Pérez Highly Bi-doped Cu thin films with large spin-mixing conductance APL Materials |
| title | Highly Bi-doped Cu thin films with large spin-mixing conductance |
| title_full | Highly Bi-doped Cu thin films with large spin-mixing conductance |
| title_fullStr | Highly Bi-doped Cu thin films with large spin-mixing conductance |
| title_full_unstemmed | Highly Bi-doped Cu thin films with large spin-mixing conductance |
| title_short | Highly Bi-doped Cu thin films with large spin-mixing conductance |
| title_sort | highly bi doped cu thin films with large spin mixing conductance |
| url | http://dx.doi.org/10.1063/1.5049944 |
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