Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode
The gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) having an asymmetric graphene electrode structure are studied. A large positive shift in the threshold voltage, which is well fitted to a stretched-exponential equation, and an increas...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2015-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4931084 |
| _version_ | 1818504409078824960 |
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| author | Joonwoo Kim Sung Myung Hee-Yeon Noh Soon Moon Jeong Jaewook Jeong |
| author_facet | Joonwoo Kim Sung Myung Hee-Yeon Noh Soon Moon Jeong Jaewook Jeong |
| author_sort | Joonwoo Kim |
| collection | DOAJ |
| description | The gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) having an asymmetric graphene electrode structure are studied. A large positive shift in the threshold voltage, which is well fitted to a stretched-exponential equation, and an increase in the subthreshold slope are observed when drain current stress is applied. This is due to an increase in temperature caused by power dissipation in the graphene/a-IGZO contact region, in addition to the channel region, which is different from the behavior in a-IGZO TFTs with a conventional transparent electrode. |
| first_indexed | 2024-12-10T21:36:44Z |
| format | Article |
| id | doaj.art-27fc421c7fc84b8db4c7cf45d7ed4c02 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T21:36:44Z |
| publishDate | 2015-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-27fc421c7fc84b8db4c7cf45d7ed4c022022-12-22T01:32:37ZengAIP Publishing LLCAIP Advances2158-32262015-09-0159097141097141-810.1063/1.4931084041509ADVGate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrodeJoonwoo Kim0Sung Myung1Hee-Yeon Noh2Soon Moon Jeong3Jaewook Jeong4Nano & Bio Research Division, Daegu Gyeongbuk Institute of Science and Technology, Daegu, 42988, South KoreaThin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon, 34114, South KoreaNano & Bio Research Division, Daegu Gyeongbuk Institute of Science and Technology, Daegu, 42988, South KoreaNano & Bio Research Division, Daegu Gyeongbuk Institute of Science and Technology, Daegu, 42988, South KoreaSchool of Information and Communication Engineering, Chungbuk National University, 28644, Cheongju, Chungbuk, South KoreaThe gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) having an asymmetric graphene electrode structure are studied. A large positive shift in the threshold voltage, which is well fitted to a stretched-exponential equation, and an increase in the subthreshold slope are observed when drain current stress is applied. This is due to an increase in temperature caused by power dissipation in the graphene/a-IGZO contact region, in addition to the channel region, which is different from the behavior in a-IGZO TFTs with a conventional transparent electrode.http://dx.doi.org/10.1063/1.4931084 |
| spellingShingle | Joonwoo Kim Sung Myung Hee-Yeon Noh Soon Moon Jeong Jaewook Jeong Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode AIP Advances |
| title | Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode |
| title_full | Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode |
| title_fullStr | Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode |
| title_full_unstemmed | Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode |
| title_short | Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode |
| title_sort | gate voltage and drain current stress instabilities in amorphous in ga zn o thin film transistors with an asymmetric graphene electrode |
| url | http://dx.doi.org/10.1063/1.4931084 |
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