Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub>
A relaxor-based ferroelectric single crystal with the nominal composition of xPb(Sm<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub>-(0.7‒x) Pb(Mg<sub>1/3</sub>Nb<sub>1/3</sub>)O<sub>3</sub>-0.3PbTiO<sub>3</sub> (x = 0.01...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-04-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/11/4/402 |
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| author | Fan Liao Yan Zhao Ziyun Chen Yanqing Zheng Hongbing Chen |
| author_facet | Fan Liao Yan Zhao Ziyun Chen Yanqing Zheng Hongbing Chen |
| author_sort | Fan Liao |
| collection | DOAJ |
| description | A relaxor-based ferroelectric single crystal with the nominal composition of xPb(Sm<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub>-(0.7‒x) Pb(Mg<sub>1/3</sub>Nb<sub>1/3</sub>)O<sub>3</sub>-0.3PbTiO<sub>3</sub> (x = 0.01, 0.02, and 0.03) was grown by the vertical Bridgman process. The electrical properties and the ferroelectric domains, as well as the luminescent characteristics of the single crystals, were investigated systematically. The piezoelectric coefficient <i>d</i><sub>33</sub> of the single crystals are slightly higher than that of the undoped PMN-PT single crystal under direct current polarization, while the crystal wafers gain a much higher <i>d</i><sub>33</sub> value upon being polarized with alternating current voltage. The single crystals possess a decreased phase transition temperature of around 60 °C and a decreased Curie temperature of 92~116 °C compared with the undoped PMN-PT single crystal. The crystal wafers polarized with alternating current voltage exhibited a desirable optical transmittance, which is associated with the domain structure changes inside the crystal medium. The domain density of the crystal wafers under alternating current polarization was significantly decreased compared with the direct current polarized crystal wafers. The luminescent spectra of the crystal wafers exhibit the typical emission peaks corresponding to the characteristic transition of Sm<sup>3+</sup> ions in the crystal lattice. |
| first_indexed | 2024-03-10T12:26:46Z |
| format | Article |
| id | doaj.art-2805ca8efd584304938aedf8d59076b4 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T12:26:46Z |
| publishDate | 2021-04-01 |
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| record_format | Article |
| series | Crystals |
| spelling | doaj.art-2805ca8efd584304938aedf8d59076b42023-11-21T14:58:54ZengMDPI AGCrystals2073-43522021-04-0111440210.3390/cryst11040402Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub>Fan Liao0Yan Zhao1Ziyun Chen2Yanqing Zheng3Hongbing Chen4State Key Base of Functional Material & Its Preparation Science, Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Institute of Materials Science & Chemical Engineering, Ningbo University, Ningbo 315211, ChinaState Key Base of Functional Material & Its Preparation Science, Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Institute of Materials Science & Chemical Engineering, Ningbo University, Ningbo 315211, ChinaDepartment of Instrument Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaState Key Base of Functional Material & Its Preparation Science, Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Institute of Materials Science & Chemical Engineering, Ningbo University, Ningbo 315211, ChinaState Key Base of Functional Material & Its Preparation Science, Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Institute of Materials Science & Chemical Engineering, Ningbo University, Ningbo 315211, ChinaA relaxor-based ferroelectric single crystal with the nominal composition of xPb(Sm<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub>-(0.7‒x) Pb(Mg<sub>1/3</sub>Nb<sub>1/3</sub>)O<sub>3</sub>-0.3PbTiO<sub>3</sub> (x = 0.01, 0.02, and 0.03) was grown by the vertical Bridgman process. The electrical properties and the ferroelectric domains, as well as the luminescent characteristics of the single crystals, were investigated systematically. The piezoelectric coefficient <i>d</i><sub>33</sub> of the single crystals are slightly higher than that of the undoped PMN-PT single crystal under direct current polarization, while the crystal wafers gain a much higher <i>d</i><sub>33</sub> value upon being polarized with alternating current voltage. The single crystals possess a decreased phase transition temperature of around 60 °C and a decreased Curie temperature of 92~116 °C compared with the undoped PMN-PT single crystal. The crystal wafers polarized with alternating current voltage exhibited a desirable optical transmittance, which is associated with the domain structure changes inside the crystal medium. The domain density of the crystal wafers under alternating current polarization was significantly decreased compared with the direct current polarized crystal wafers. The luminescent spectra of the crystal wafers exhibit the typical emission peaks corresponding to the characteristic transition of Sm<sup>3+</sup> ions in the crystal lattice.https://www.mdpi.com/2073-4352/11/4/402relaxor-based ferroelectric single crystalcrystal growthelectrical propertyluminescent properties |
| spellingShingle | Fan Liao Yan Zhao Ziyun Chen Yanqing Zheng Hongbing Chen Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> Crystals relaxor-based ferroelectric single crystal crystal growth electrical property luminescent properties |
| title | Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> |
| title_full | Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> |
| title_fullStr | Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> |
| title_full_unstemmed | Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> |
| title_short | Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> |
| title_sort | bridgman growth and photoelectronic property of relaxor based ferroelectric single crystal pb sm sub 1 2 sub nb sub 1 2 sub o sub 3 sub pb mg sub 1 3 sub nb sub 2 3 sub o sub 3 sub pbtio sub 3 sub |
| topic | relaxor-based ferroelectric single crystal crystal growth electrical property luminescent properties |
| url | https://www.mdpi.com/2073-4352/11/4/402 |
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