Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer
The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 × 1010 cm ⋅ Hz1/2W−1. The...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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De Gruyter
2021-02-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2021-0002 |
| _version_ | 1819026745950470144 |
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| author | Kim Cihyun Yoo Tae Jin Chang Kyoung Eun Kwon Min Gyu Hwang Hyeon Jun Lee Byoung Hun |
| author_facet | Kim Cihyun Yoo Tae Jin Chang Kyoung Eun Kwon Min Gyu Hwang Hyeon Jun Lee Byoung Hun |
| author_sort | Kim Cihyun |
| collection | DOAJ |
| description | The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 × 1010 cm ⋅ Hz1/2W−1. The responsivity is improved to 1.2 AW−1 with an interfacial layer from 0.5 AW−1 of the reference devices. The normalized photo-to-dark current ratio is improved to 4.3 × 107 W−1 at a wavelength of 1550 nm, which is 10–100 times higher than those of other Ge photodetectors. |
| first_indexed | 2024-12-21T05:31:28Z |
| format | Article |
| id | doaj.art-2816a5a6d7d6456ca1b0c2f196e554ed |
| institution | Directory Open Access Journal |
| issn | 2192-8606 2192-8614 |
| language | English |
| last_indexed | 2024-12-21T05:31:28Z |
| publishDate | 2021-02-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-2816a5a6d7d6456ca1b0c2f196e554ed2022-12-21T19:14:32ZengDe GruyterNanophotonics2192-86062192-86142021-02-011051573157910.1515/nanoph-2021-0002Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layerKim Cihyun0Yoo Tae Jin1Chang Kyoung Eun2Kwon Min Gyu3Hwang Hyeon Jun4Lee Byoung Hun5Department of Electrical Engineering, Pohang University of Science and Technology, 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, 37673, Republic of KoreaDepartment of Electrical Engineering, Pohang University of Science and Technology, 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, 37673, Republic of KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of KoreaDepartment of Electrical Engineering, Pohang University of Science and Technology, 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, 37673, Republic of KoreaDepartment of Electrical Engineering, Pohang University of Science and Technology, 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, 37673, Republic of KoreaThe performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 × 1010 cm ⋅ Hz1/2W−1. The responsivity is improved to 1.2 AW−1 with an interfacial layer from 0.5 AW−1 of the reference devices. The normalized photo-to-dark current ratio is improved to 4.3 × 107 W−1 at a wavelength of 1550 nm, which is 10–100 times higher than those of other Ge photodetectors.https://doi.org/10.1515/nanoph-2021-0002graphenegraphene/germanium heterostructureinterfacial oxide layerphotodetectorschottky junction |
| spellingShingle | Kim Cihyun Yoo Tae Jin Chang Kyoung Eun Kwon Min Gyu Hwang Hyeon Jun Lee Byoung Hun Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer Nanophotonics graphene graphene/germanium heterostructure interfacial oxide layer photodetector schottky junction |
| title | Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer |
| title_full | Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer |
| title_fullStr | Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer |
| title_full_unstemmed | Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer |
| title_short | Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer |
| title_sort | highly responsive near infrared photodetector with low dark current using graphene germanium schottky junction with al2o3 interfacial layer |
| topic | graphene graphene/germanium heterostructure interfacial oxide layer photodetector schottky junction |
| url | https://doi.org/10.1515/nanoph-2021-0002 |
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