The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum Wells

In this work, the effects of size, and temperature on the linear and nonlinear optical properties in InGaN/GaN inverse parabolic and triangular quantum wells (IPQW and ITQW) for different concentrations at the well center were theoretically investigated. The indium concentrations at the barriers we...

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Main Authors: Redouane En-nadir, Haddou El Ghazi, Walid Belaid, Hassan Abboudi, Fath allah Jabouti, Anouar Jorio, Izeddine Zorkani
Format: Article
Language:English
Published: University of Baghdad 2022-03-01
Series:Iraqi Journal of Physics
Subjects:
Online Access:https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/965
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author Redouane En-nadir
Haddou El Ghazi
Walid Belaid
Hassan Abboudi
Fath allah Jabouti
Anouar Jorio
Izeddine Zorkani
author_facet Redouane En-nadir
Haddou El Ghazi
Walid Belaid
Hassan Abboudi
Fath allah Jabouti
Anouar Jorio
Izeddine Zorkani
author_sort Redouane En-nadir
collection DOAJ
description In this work, the effects of size, and temperature on the linear and nonlinear optical properties in InGaN/GaN inverse parabolic and triangular quantum wells (IPQW and ITQW) for different concentrations at the well center were theoretically investigated. The indium concentrations at the barriers were fixed to be always xmax = 0.2. The energy levels and their associated wave functions are computed within the effective mass approximation. The expressions of optical properties are obtained analytically by using the compact density-matrix approach. The linear, nonlinear, and total absorption coefficients depending on the In concentrations at the well center are investigated as a function of the incident photon energy for different values of temperature and quantum wells size. The results show that the In concentrations, size and temperature have a significant effect on these optical properties. The positions of the resonance peaks of the absorption coefficients were blue-shifted under increasing indium compositions in the quantum wells (InGaN) and temperature while they were red-shifted with the increase in the thickness of the wells. Moreover, the amplitudes of the resonance peaks were enhanced under the increase of the In composition, the temperature, and the thickness of the quantum wells. The optical absorption in ITQW structure is slightly greater than that in IPQW one.
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spelling doaj.art-2848ad01552c439caa942f853e2ec6542023-03-10T20:47:28ZengUniversity of BaghdadIraqi Journal of Physics2070-40032664-55482022-03-0120110.30723/ijp.v20i1.965The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum WellsRedouane En-nadir0Haddou El Ghazi1Walid Belaid 2Hassan Abboudi3Fath allah Jabouti4Anouar Jorio5Izeddine Zorkani6LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco.SPME Group, ENSAM, Hassan II University, Casablanca, Morocco.LPD, Microscopy Group, Faculty of Sciences, Selcuk University, Konya, Turkey.LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco.LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco.LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco.LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco. In this work, the effects of size, and temperature on the linear and nonlinear optical properties in InGaN/GaN inverse parabolic and triangular quantum wells (IPQW and ITQW) for different concentrations at the well center were theoretically investigated. The indium concentrations at the barriers were fixed to be always xmax = 0.2. The energy levels and their associated wave functions are computed within the effective mass approximation. The expressions of optical properties are obtained analytically by using the compact density-matrix approach. The linear, nonlinear, and total absorption coefficients depending on the In concentrations at the well center are investigated as a function of the incident photon energy for different values of temperature and quantum wells size. The results show that the In concentrations, size and temperature have a significant effect on these optical properties. The positions of the resonance peaks of the absorption coefficients were blue-shifted under increasing indium compositions in the quantum wells (InGaN) and temperature while they were red-shifted with the increase in the thickness of the wells. Moreover, the amplitudes of the resonance peaks were enhanced under the increase of the In composition, the temperature, and the thickness of the quantum wells. The optical absorption in ITQW structure is slightly greater than that in IPQW one. https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/965Optical propertiesIntrasubband transitionsInverse parabolic QWInverse triangular QWIn-compositions
spellingShingle Redouane En-nadir
Haddou El Ghazi
Walid Belaid
Hassan Abboudi
Fath allah Jabouti
Anouar Jorio
Izeddine Zorkani
The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum Wells
Iraqi Journal of Physics
Optical properties
Intrasubband transitions
Inverse parabolic QW
Inverse triangular QW
In-compositions
title The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum Wells
title_full The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum Wells
title_fullStr The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum Wells
title_full_unstemmed The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum Wells
title_short The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum Wells
title_sort confinement profile effect on the optical properties in different inverse shaped single ingan gan quantum wells
topic Optical properties
Intrasubband transitions
Inverse parabolic QW
Inverse triangular QW
In-compositions
url https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/965
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