Different point defects originated from dissimilar deposition conditions in n-type Cu-doped Bi2Te3 films; crystal structure and thermoelectric property depending on Te-vacancy concentration
We found that two types of Cu-doped Bi2Te3 thin films fabricated by dissimilar sputter process had different microstructures and non-stoichiometries (Bi:Te ratios). We investigated the different levels of Te-vacancy (VTe2+) concentration in the films affected the point defects and the thermoelectric...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2021-11-01
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Series: | Journal of Materials Research and Technology |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785421008103 |