Different point defects originated from dissimilar deposition conditions in n-type Cu-doped Bi2Te3 films; crystal structure and thermoelectric property depending on Te-vacancy concentration

Different point defects originated from dissimilar deposition conditions in n-type Cu-doped Bi2Te3 films; crystal structure and thermoelectric property depending on Te-vacancy concentration

We found that two types of Cu-doped Bi2Te3 thin films fabricated by dissimilar sputter process had different microstructures and non-stoichiometries (Bi:Te ratios). We investigated the different levels of Te-vacancy (VTe2+) concentration in the films affected the point defects and the thermoelectric...

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Bibliographic Details
Main Authors: Byeong Geun Kim, Kang Hyun Seo, Chang-Hyun Lim, Soon-Mok Choi
Format: Article
Language:English
Published: Elsevier 2021-11-01
Series:Journal of Materials Research and Technology
Subjects:
Thermoelectric
Bi2Te3
Defect
Doping
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785421008103

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