From the Buffer Layer to Graphene on Silicon Carbide: Exploring Morphologies by Computer Modeling
Epitaxial graphene grown by thermal Si decomposition of Silicon Carbide appears in different morphological variants, depending on the production conditions: the strongly rugged buffer layer, retaining a considerable amount of sp3 hybridized buffer layer, the softly corrugated graphene monolayer and...
Main Authors: | Luca Bellucci, Tommaso Cavallucci, Valentina Tozzini |
---|---|
Format: | Article |
Language: | English |
Published: |
Frontiers Media S.A.
2019-08-01
|
Series: | Frontiers in Materials |
Subjects: | |
Online Access: | https://www.frontiersin.org/article/10.3389/fmats.2019.00198/full |
Similar Items
-
Silicon carbide /
by: 269121 Frantsevich, I. N., et al.
Published: (1970) -
Silicon carbide '87 /
by: Silicon Carbide Symposium (1987 : Columbus, Ohio), et al.
Published: (c198) -
Influence of Graphene Type and Content on Friction and Wear of Silicon Carbide/Graphene Nanocomposites in Aqueous Environment
by: Bernadette Schlüter, et al.
Published: (2022-11-01) -
Silicon carbide devices and technology /
by: Fraley, Bill
Published: (2015) -
Silicon carbide and related materials 2008 : selected, peer reviewed papers from the 7th European conference on silicon carbide and related materials, September 7-11, Barcelona, Spain /
by: European Conference on Silicon Carbide and Related Materials (7th : 2008 : Barcelona, Spain), et al.
Published: (2009)