Calculations of Energy Band Structure of GaAs, GaSb and GaP Crystals as a Function of Temperature Using the Semiempirical Tight Binding Method
Abstract<br /> In this paper, the band structure of gallium group of III-V semiconductor has been calculated with temperature, the semi-empirical tight binding method was used to calculate the band structure and the matrix elements were calculated for both models sp^3 and sp^3 s^*. A computer...
| Main Authors: | , |
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| Format: | Article |
| Language: | Arabic |
| Published: |
College of Education for Pure Sciences
2021-09-01
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| Series: | مجلة التربية والعلم |
| Subjects: | |
| Online Access: | https://edusj.mosuljournals.com/article_168807_32b96f9fb6ce66941b33eeba2f09bd1d.pdf |