| Summary: | We fabricated and investigated an InAs/high-k/low-k
structure in
comparison with an InAs/low-k
structure, where
the former and the latter are respectively obtained by bonding of
InAs/Al2O3/AlN and InAs on low-k flexible substrates (FS).
The InAs/high-k/low-k
(InAs/Al2O3/AlN/FS) exhibits electron mobilities immune to
interface
fluctuation scattering, whereas this scattering is serious for the InAs/low-k
(InAs/FS). Moreover, we find that electron sheet concentrations in the
InAs/high-k/low-k are significantly higher than those
in the InAs/low-k. From InAs/Al2O3
interface analysis
by energy-dispersive X-ray spectroscopy and electron energy-loss spectroscopy, we find that the higher
electron concentrations can be attributed to natural modulation doping from
Al2O3 to InAs.
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