An InAs/high-k/low-k structure: Electron
transport and interface analysis

An InAs/high-k/low-k structure: Electron transport and interface analysis

We fabricated and investigated an InAs/high-k/low-k structure in comparison with an InAs/low-k structure, where the former and the latter are respectively obtained by bonding of InAs/Al2O3/AlN and InAs on low-k flexible substrates (FS). T...

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Bibliographic Details
Main Authors:	Toshimasa Ui, Ryousuke Mori, Son Phuong Le, Yoshifumi Oshima, Toshi-kazu Suzuki
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2017-05-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4983176

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