Enhanced Performance of GaAs Metal-Oxide-Semiconductor Capacitors Using a TaON/GeON Dual Interlayer
In this work, a dual interfacial passivation layer (IPL) consisting of TaON/GeON is implemented in GaAs metal-oxide-semiconductor (MOS) capacitors with ZrTaON as a high-k layer to obtain superior interfacial and electrical properties. As compared to the samples with only GeON IPL or no IPL, the samp...
| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
MDPI AG
2023-09-01
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| coleção: | Nanomaterials |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2079-4991/13/19/2673 |