Material Removal Model for Lapping Process Based on Spiral Groove Density

Material Removal Model for Lapping Process Based on Spiral Groove Density

The increasing demand for single-crystal wafers combined with the increase in diameter of semiconductor wafers has warranted further improvements in thickness variation and material removal rate during lapping to ensure price competitiveness of wafers; consequently, the lapping process has gained th...

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Bibliographic Details
Main Authors: Taekyung Lee, Haedo Jeong, Sangjik Lee, Hanchul Cho, Doyeon Kim, Hyoungjae Kim
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Applied Sciences
Subjects:
lapping
groove density
contact interface
oil film
wafer
boundary lubrication
Online Access:https://www.mdpi.com/2076-3417/11/9/3950

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