Impacts of Cu-Doping on the Performance of La-Based RRAM Devices
Abstract In this paper, the effects of Cu insertion layer and rapid thermal annealing on the resistive switching behaviors of La-based resistive switching access memory (RRAM) devices have been investigated. Compared with the undoped control sample (Cu/LaAlO3/Pt), the Cu-embedded devices show higher...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2019-07-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-3064-1 |
| _version_ | 1827851831729979392 |
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| author | Yongte Wang Hongxia Liu Xing Wang Lu Zhao |
| author_facet | Yongte Wang Hongxia Liu Xing Wang Lu Zhao |
| author_sort | Yongte Wang |
| collection | DOAJ |
| description | Abstract In this paper, the effects of Cu insertion layer and rapid thermal annealing on the resistive switching behaviors of La-based resistive switching access memory (RRAM) devices have been investigated. Compared with the undoped control sample (Cu/LaAlO3/Pt), the Cu-embedded devices show higher device yield and reset stop voltage, which indicates that the reliability of La-based RRAM has been effectively improved. However, the unannealed Cu/LaAlO3: Cu/Pt RRAM device still suffers from serious dispersion of parameters. It was proved that the RRAM device with Cu insertion layer and annealing treatment exhibits the best resistive switching characteristics such as low forming voltage, high on/off ratio and fine electrical uniformity. These improvements can be attributed to the diffusion of Cu atoms and the formation of Cu nanocrystals (Cu-NCs) after annealing process, since the diffused Cu atoms and the Cu-NCs could enhance the local electric field and weaken the randomness of the formation/rupture of conductive filaments. |
| first_indexed | 2024-03-12T10:39:23Z |
| format | Article |
| id | doaj.art-291dac2c8c41427fb3f746dc24e87f46 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T10:39:23Z |
| publishDate | 2019-07-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-291dac2c8c41427fb3f746dc24e87f462023-09-02T08:18:13ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-07-011411910.1186/s11671-019-3064-1Impacts of Cu-Doping on the Performance of La-Based RRAM DevicesYongte Wang0Hongxia Liu1Xing Wang2Lu Zhao3Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian UniversityKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian UniversityKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian UniversityKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian UniversityAbstract In this paper, the effects of Cu insertion layer and rapid thermal annealing on the resistive switching behaviors of La-based resistive switching access memory (RRAM) devices have been investigated. Compared with the undoped control sample (Cu/LaAlO3/Pt), the Cu-embedded devices show higher device yield and reset stop voltage, which indicates that the reliability of La-based RRAM has been effectively improved. However, the unannealed Cu/LaAlO3: Cu/Pt RRAM device still suffers from serious dispersion of parameters. It was proved that the RRAM device with Cu insertion layer and annealing treatment exhibits the best resistive switching characteristics such as low forming voltage, high on/off ratio and fine electrical uniformity. These improvements can be attributed to the diffusion of Cu atoms and the formation of Cu nanocrystals (Cu-NCs) after annealing process, since the diffused Cu atoms and the Cu-NCs could enhance the local electric field and weaken the randomness of the formation/rupture of conductive filaments.http://link.springer.com/article/10.1186/s11671-019-3064-1LaAlO3RRAMCu-dopingAnnealingResistive switching characteristics |
| spellingShingle | Yongte Wang Hongxia Liu Xing Wang Lu Zhao Impacts of Cu-Doping on the Performance of La-Based RRAM Devices Nanoscale Research Letters LaAlO3 RRAM Cu-doping Annealing Resistive switching characteristics |
| title | Impacts of Cu-Doping on the Performance of La-Based RRAM Devices |
| title_full | Impacts of Cu-Doping on the Performance of La-Based RRAM Devices |
| title_fullStr | Impacts of Cu-Doping on the Performance of La-Based RRAM Devices |
| title_full_unstemmed | Impacts of Cu-Doping on the Performance of La-Based RRAM Devices |
| title_short | Impacts of Cu-Doping on the Performance of La-Based RRAM Devices |
| title_sort | impacts of cu doping on the performance of la based rram devices |
| topic | LaAlO3 RRAM Cu-doping Annealing Resistive switching characteristics |
| url | http://link.springer.com/article/10.1186/s11671-019-3064-1 |
| work_keys_str_mv | AT yongtewang impactsofcudopingontheperformanceoflabasedrramdevices AT hongxialiu impactsofcudopingontheperformanceoflabasedrramdevices AT xingwang impactsofcudopingontheperformanceoflabasedrramdevices AT luzhao impactsofcudopingontheperformanceoflabasedrramdevices |