Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime
Using localized surface plasmon resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, the infrared spectroscopy study coupled to numerica...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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De Gruyter
2022-07-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2022-0283 |
| _version_ | 1826963946940137472 |
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| author | Zhang Meiling Poumirol Jean-Marie Chery Nicolas Majorel Clément Demoulin Rémi Talbot Etienne Rinnert Hervé Girard Christian Cristiano Fuccio Wiecha Peter R. Hungria Teresa Paillard Vincent Arbouet Arnaud Pécassou Béatrice Gourbilleau Fabrice Bonafos Caroline |
| author_facet | Zhang Meiling Poumirol Jean-Marie Chery Nicolas Majorel Clément Demoulin Rémi Talbot Etienne Rinnert Hervé Girard Christian Cristiano Fuccio Wiecha Peter R. Hungria Teresa Paillard Vincent Arbouet Arnaud Pécassou Béatrice Gourbilleau Fabrice Bonafos Caroline |
| author_sort | Zhang Meiling |
| collection | DOAJ |
| description | Using localized surface plasmon resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, the infrared spectroscopy study coupled to numerical simulations allows us to determine the number of electrically active phosphorus atoms with a precision of a few atoms. We demonstrate that LSP resonances can be supported with only about 10 free electrons per nanocrystal, confirming theoretical predictions and probing the limit of the collective nature of plasmons. We reveal the appearance of an avoided crossing behavior linked to the hybridization between the localized surface plasmon in the doped nanocrystals and the silica matrix phonon modes. Finally, a careful analysis of the scattering time dependence versus carrier density in the small size regime allows us to detect the appearance of a new scattering process at high dopant concentration, which can be explained by P clustering inside the SiNCs. |
| first_indexed | 2024-04-10T21:34:33Z |
| format | Article |
| id | doaj.art-292d66af9230464ba07c30a55edd2585 |
| institution | Directory Open Access Journal |
| issn | 2192-8614 |
| language | English |
| last_indexed | 2025-02-18T02:48:14Z |
| publishDate | 2022-07-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-292d66af9230464ba07c30a55edd25852024-11-25T11:19:07ZengDe GruyterNanophotonics2192-86142022-07-0111153485349310.1515/nanoph-2022-0283Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regimeZhang Meiling0Poumirol Jean-Marie1Chery Nicolas2Majorel Clément3Demoulin Rémi4Talbot Etienne5Rinnert Hervé6Girard Christian7Cristiano Fuccio8Wiecha Peter R.9Hungria Teresa10Paillard Vincent11Arbouet Arnaud12Pécassou Béatrice13Gourbilleau Fabrice14Bonafos Caroline15CEMES-CNRS, Université de Toulouse, CNRS, 31055Toulouse, FranceCEMES-CNRS, Université de Toulouse, CNRS, 31055Toulouse, FranceCEMES-CNRS, Université de Toulouse, CNRS, 31055Toulouse, FranceCEMES-CNRS, Université de Toulouse, CNRS, 31055Toulouse, FranceGroupe de Physique des Matériaux, Normandie Univ, UNIROUEN, INSA Rouen, CNRS, 76000Rouen, FranceGroupe de Physique des Matériaux, Normandie Univ, UNIROUEN, INSA Rouen, CNRS, 76000Rouen, FranceUniversité de Lorraine CNRS, IJL, Nancy, FranceCEMES-CNRS, Université de Toulouse, CNRS, 31055Toulouse, FranceLAAS-CNRS, Université de Toulouse, CNRS, 31031Toulouse, FranceLAAS-CNRS, Université de Toulouse, CNRS, 31031Toulouse, FranceCentre de Microcaractérisation Raimond Castaing (UAR 3623), 31400Toulouse, FranceCEMES-CNRS, Université de Toulouse, CNRS, 31055Toulouse, FranceCEMES-CNRS, Université de Toulouse, CNRS, 31055Toulouse, FranceCEMES-CNRS, Université de Toulouse, CNRS, 31055Toulouse, FranceCIMAP, Normandie Univ, ENSICAEN, UNICAEN, CEA, CNRS, 6 Boulevard Maréchal Juin, 14050, Caen Cedex 4, FranceCEMES-CNRS, Université de Toulouse, CNRS, 31055Toulouse, FranceUsing localized surface plasmon resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, the infrared spectroscopy study coupled to numerical simulations allows us to determine the number of electrically active phosphorus atoms with a precision of a few atoms. We demonstrate that LSP resonances can be supported with only about 10 free electrons per nanocrystal, confirming theoretical predictions and probing the limit of the collective nature of plasmons. We reveal the appearance of an avoided crossing behavior linked to the hybridization between the localized surface plasmon in the doped nanocrystals and the silica matrix phonon modes. Finally, a careful analysis of the scattering time dependence versus carrier density in the small size regime allows us to detect the appearance of a new scattering process at high dopant concentration, which can be explained by P clustering inside the SiNCs.https://doi.org/10.1515/nanoph-2022-0283few electrons regimegreen dyadic methodplasmon hybridizationsemiconductor-based plasmonicsilicon nanocrystals |
| spellingShingle | Zhang Meiling Poumirol Jean-Marie Chery Nicolas Majorel Clément Demoulin Rémi Talbot Etienne Rinnert Hervé Girard Christian Cristiano Fuccio Wiecha Peter R. Hungria Teresa Paillard Vincent Arbouet Arnaud Pécassou Béatrice Gourbilleau Fabrice Bonafos Caroline Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime Nanophotonics few electrons regime green dyadic method plasmon hybridization semiconductor-based plasmonic silicon nanocrystals |
| title | Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime |
| title_full | Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime |
| title_fullStr | Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime |
| title_full_unstemmed | Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime |
| title_short | Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime |
| title_sort | infrared nanoplasmonic properties of hyperdoped embedded si nanocrystals in the few electrons regime |
| topic | few electrons regime green dyadic method plasmon hybridization semiconductor-based plasmonic silicon nanocrystals |
| url | https://doi.org/10.1515/nanoph-2022-0283 |
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