Quantum Yield of Reflection Mode Varied Doping GaN Photocathode
Using the NEA photocathode activation and evaluation experiment system, the varied doping GaN photocathode has been activated and evaluated. According to the diffusion and orientation drifting equation, the quantum yield formula of reflection mode varied doping NEA GaN photocathode was gotten. The f...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2016-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | http://dx.doi.org/10.1051/matecconf/20166702019 |
| _version_ | 1818612784561127424 |
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| author | Qiao Jianliang Li Xiangjiang Niu Jun Gao Youtang |
| author_facet | Qiao Jianliang Li Xiangjiang Niu Jun Gao Youtang |
| author_sort | Qiao Jianliang |
| collection | DOAJ |
| description | Using the NEA photocathode activation and evaluation experiment system, the varied doping GaN photocathode has been activated and evaluated. According to the diffusion and orientation drifting equation, the quantum yield formula of reflection mode varied doping NEA GaN photocathode was gotten. The factors affecting the quantum efficiency of varied doping GaN photocathode were studied. For the varied doping GaN photocathode, the quantum efficiency is mainly decided by the escape probability of electron P, he absorption coefficient α, the electron diffuse length LD, the reflectance of cathode materials for incident light R, emission layer thickness Te and the inside electric field E. The experiment and analysis results show: With the directional inside electric field in the bulk, the varied doping NEA GaN photocathode has better photoemission performance than uniform doping photocathode. |
| first_indexed | 2024-12-16T15:51:44Z |
| format | Article |
| id | doaj.art-29386cb4eae04cd888659110e8c05ebd |
| institution | Directory Open Access Journal |
| issn | 2261-236X |
| language | English |
| last_indexed | 2024-12-16T15:51:44Z |
| publishDate | 2016-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | MATEC Web of Conferences |
| spelling | doaj.art-29386cb4eae04cd888659110e8c05ebd2022-12-21T22:25:42ZengEDP SciencesMATEC Web of Conferences2261-236X2016-01-01670201910.1051/matecconf/20166702019matecconf_smae2016_02019Quantum Yield of Reflection Mode Varied Doping GaN PhotocathodeQiao Jianliang0Li Xiangjiang1Niu Jun2Gao Youtang3School of Electronic and Electrical Engineering, Nanyang Institute of TechnologySchool of Electronic and Electrical Engineering, Nanyang Institute of TechnologySchool of Electronic and Electrical Engineering, Nanyang Institute of TechnologySchool of Electronic and Electrical Engineering, Nanyang Institute of TechnologyUsing the NEA photocathode activation and evaluation experiment system, the varied doping GaN photocathode has been activated and evaluated. According to the diffusion and orientation drifting equation, the quantum yield formula of reflection mode varied doping NEA GaN photocathode was gotten. The factors affecting the quantum efficiency of varied doping GaN photocathode were studied. For the varied doping GaN photocathode, the quantum efficiency is mainly decided by the escape probability of electron P, he absorption coefficient α, the electron diffuse length LD, the reflectance of cathode materials for incident light R, emission layer thickness Te and the inside electric field E. The experiment and analysis results show: With the directional inside electric field in the bulk, the varied doping NEA GaN photocathode has better photoemission performance than uniform doping photocathode.http://dx.doi.org/10.1051/matecconf/20166702019 |
| spellingShingle | Qiao Jianliang Li Xiangjiang Niu Jun Gao Youtang Quantum Yield of Reflection Mode Varied Doping GaN Photocathode MATEC Web of Conferences |
| title | Quantum Yield of Reflection Mode Varied Doping GaN Photocathode |
| title_full | Quantum Yield of Reflection Mode Varied Doping GaN Photocathode |
| title_fullStr | Quantum Yield of Reflection Mode Varied Doping GaN Photocathode |
| title_full_unstemmed | Quantum Yield of Reflection Mode Varied Doping GaN Photocathode |
| title_short | Quantum Yield of Reflection Mode Varied Doping GaN Photocathode |
| title_sort | quantum yield of reflection mode varied doping gan photocathode |
| url | http://dx.doi.org/10.1051/matecconf/20166702019 |
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