High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate
Constant advance in improving the luminous efficacy (<i>η</i><sub>L</sub>) of nitride-based light-emitting diodes (LEDs) plays a critical role for saving measurable amounts of energy. Further development is motivated to approach the efficiency limit for this material system w...
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| Format: | Article |
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MDPI AG
2022-05-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/10/1638 |
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| author | Shuo Zhang Meng Liang Yan Yan Jinpeng Huang Yan Li Tao Feng Xueliang Zhu Zhicong Li Chenke Xu Junxi Wang Jinmin Li Zhiqiang Liu Xiaoyan Yi |
| author_facet | Shuo Zhang Meng Liang Yan Yan Jinpeng Huang Yan Li Tao Feng Xueliang Zhu Zhicong Li Chenke Xu Junxi Wang Jinmin Li Zhiqiang Liu Xiaoyan Yi |
| author_sort | Shuo Zhang |
| collection | DOAJ |
| description | Constant advance in improving the luminous efficacy (<i>η</i><sub>L</sub>) of nitride-based light-emitting diodes (LEDs) plays a critical role for saving measurable amounts of energy. Further development is motivated to approach the efficiency limit for this material system while reducing the costs. In this work, strategies of using thin AlN prebuffer and transitional-refraction-index patterned sapphire substrate (TPSS) were proposed, which pushed up the efficiency of white LEDs (WLEDs). The AlN prebuffer was obtained through physical vapor deposition (PVD) method and TPSS was fabricated by dry-etched periodic silica arrays covered on sapphire. Devices in mass production confirmed that PVD AlN prebuffer was able to improve the light output power (<i>φ</i><sub>e</sub>) of blue LEDs (BLEDs) by 2.53% while increasing the productivity by ~8% through shortening the growth time. Additionally, BLEDs on TPSS exhibited an enhanced top <i>η</i><sub>ext</sub> of 5.65% in contrast to BLEDs on the conventional PSS through Monte Carlo ray-tracing simulation. Consequently, <i>φ</i><sub>e</sub> of BLEDs was experimentally enhanced by 10% at an injected current density (<i>J</i><sub>in</sub>) of 40 A/cm<sup>2</sup>. A peak <i>η</i><sub>L</sub> of 295.2 lm/W at a <i>J</i><sub>in</sub> of 0.9 A/cm<sup>2</sup> and the representative <i>η</i><sub>L</sub> of 282.4 lm/W at a <i>J</i><sub>in</sub> of 5.6 A/cm<sup>2</sup> for phosphor-converted WLEDs were achieved at a correlated color temperature of 4592 K. |
| first_indexed | 2024-03-10T03:17:26Z |
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| id | doaj.art-29a7d2516e2c425cbe9e6bb5aba2eee9 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T03:17:26Z |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-29a7d2516e2c425cbe9e6bb5aba2eee92023-11-23T12:25:46ZengMDPI AGNanomaterials2079-49912022-05-011210163810.3390/nano12101638High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire SubstrateShuo Zhang0Meng Liang1Yan Yan2Jinpeng Huang3Yan Li4Tao Feng5Xueliang Zhu6Zhicong Li7Chenke Xu8Junxi Wang9Jinmin Li10Zhiqiang Liu11Xiaoyan Yi12Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaXiamen San’an Optoelectronic Technology Co., Ltd., Xiamen 361009, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaXiamen San’an Optoelectronic Technology Co., Ltd., Xiamen 361009, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaConstant advance in improving the luminous efficacy (<i>η</i><sub>L</sub>) of nitride-based light-emitting diodes (LEDs) plays a critical role for saving measurable amounts of energy. Further development is motivated to approach the efficiency limit for this material system while reducing the costs. In this work, strategies of using thin AlN prebuffer and transitional-refraction-index patterned sapphire substrate (TPSS) were proposed, which pushed up the efficiency of white LEDs (WLEDs). The AlN prebuffer was obtained through physical vapor deposition (PVD) method and TPSS was fabricated by dry-etched periodic silica arrays covered on sapphire. Devices in mass production confirmed that PVD AlN prebuffer was able to improve the light output power (<i>φ</i><sub>e</sub>) of blue LEDs (BLEDs) by 2.53% while increasing the productivity by ~8% through shortening the growth time. Additionally, BLEDs on TPSS exhibited an enhanced top <i>η</i><sub>ext</sub> of 5.65% in contrast to BLEDs on the conventional PSS through Monte Carlo ray-tracing simulation. Consequently, <i>φ</i><sub>e</sub> of BLEDs was experimentally enhanced by 10% at an injected current density (<i>J</i><sub>in</sub>) of 40 A/cm<sup>2</sup>. A peak <i>η</i><sub>L</sub> of 295.2 lm/W at a <i>J</i><sub>in</sub> of 0.9 A/cm<sup>2</sup> and the representative <i>η</i><sub>L</sub> of 282.4 lm/W at a <i>J</i><sub>in</sub> of 5.6 A/cm<sup>2</sup> for phosphor-converted WLEDs were achieved at a correlated color temperature of 4592 K.https://www.mdpi.com/2079-4991/12/10/1638light-emitting diodesAlN prebuffertransitional-refraction-index patterned sapphire substratelight output powerluminous efficacy |
| spellingShingle | Shuo Zhang Meng Liang Yan Yan Jinpeng Huang Yan Li Tao Feng Xueliang Zhu Zhicong Li Chenke Xu Junxi Wang Jinmin Li Zhiqiang Liu Xiaoyan Yi High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate Nanomaterials light-emitting diodes AlN prebuffer transitional-refraction-index patterned sapphire substrate light output power luminous efficacy |
| title | High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate |
| title_full | High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate |
| title_fullStr | High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate |
| title_full_unstemmed | High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate |
| title_short | High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate |
| title_sort | high luminous efficacy phosphor converted mass produced white leds achieved by aln prebuffer and transitional refraction index patterned sapphire substrate |
| topic | light-emitting diodes AlN prebuffer transitional-refraction-index patterned sapphire substrate light output power luminous efficacy |
| url | https://www.mdpi.com/2079-4991/12/10/1638 |
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