Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device
Mercury ion selective membrane (Hg-ISM) coated extended gate Field Effect transistors (ISM-FET) were used to manifest a novel methodology for ion-selective sensors based on FET’s, creating ultra-high sensitivity (−36 mV/log [Hg<sup>2+</sup>]) and outweighing ideal Ner...
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| Format: | Article |
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MDPI AG
2019-05-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/19/9/2209 |
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| author | Revathi Sukesan Yi-Ting Chen Suman Shahim Shin-Li Wang Indu Sarangadharan Yu-Lin Wang |
| author_facet | Revathi Sukesan Yi-Ting Chen Suman Shahim Shin-Li Wang Indu Sarangadharan Yu-Lin Wang |
| author_sort | Revathi Sukesan |
| collection | DOAJ |
| description | Mercury ion selective membrane (Hg-ISM) coated extended gate Field Effect transistors (ISM-FET) were used to manifest a novel methodology for ion-selective sensors based on FET’s, creating ultra-high sensitivity (−36 mV/log [Hg<sup>2+</sup>]) and outweighing ideal Nernst sensitivity limit (−29.58 mV/log [Hg<sup>2+</sup>]) for mercury ion. This highly enhanced sensitivity compared with the ion-selective electrode (ISE) (10<sup>−7</sup> M) has reduced the limit of detection (10<sup>−13</sup> M) of Hg<sup>2+</sup> concentration’s magnitude to considerable orders irrespective of the pH of the test solution. Systematical investigation was carried out by modulating sensor design and bias voltage, revealing that higher sensitivity and a lower detection limit can be attained in an adequately stronger electric field. Our sensor has a limit of detection of 10<sup>−13</sup> M which is two orders lower than Inductively Coupled Plasma Mass Spectrometry (ICP-MS), having a limit of detection of 10<sup>−11</sup> M. The sensitivity and detection limit do not have axiomatic changes under the presence of high concentrations of interfering ions. The technology offers economic and consumer friendly water quality monitoring options intended for homes, offices and industries. |
| first_indexed | 2024-04-12T05:47:16Z |
| format | Article |
| id | doaj.art-29b299253daf43daa326bff042d9fae3 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-12T05:47:16Z |
| publishDate | 2019-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-29b299253daf43daa326bff042d9fae32022-12-22T03:45:26ZengMDPI AGSensors1424-82202019-05-01199220910.3390/s19092209s19092209Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable DeviceRevathi Sukesan0Yi-Ting Chen1Suman Shahim2Shin-Li Wang3Indu Sarangadharan4Yu-Lin Wang5Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, TaiwanInstitute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, TaiwanInstitute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, TaiwanInstitute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, TaiwanInstitute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, TaiwanInstitute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, TaiwanMercury ion selective membrane (Hg-ISM) coated extended gate Field Effect transistors (ISM-FET) were used to manifest a novel methodology for ion-selective sensors based on FET’s, creating ultra-high sensitivity (−36 mV/log [Hg<sup>2+</sup>]) and outweighing ideal Nernst sensitivity limit (−29.58 mV/log [Hg<sup>2+</sup>]) for mercury ion. This highly enhanced sensitivity compared with the ion-selective electrode (ISE) (10<sup>−7</sup> M) has reduced the limit of detection (10<sup>−13</sup> M) of Hg<sup>2+</sup> concentration’s magnitude to considerable orders irrespective of the pH of the test solution. Systematical investigation was carried out by modulating sensor design and bias voltage, revealing that higher sensitivity and a lower detection limit can be attained in an adequately stronger electric field. Our sensor has a limit of detection of 10<sup>−13</sup> M which is two orders lower than Inductively Coupled Plasma Mass Spectrometry (ICP-MS), having a limit of detection of 10<sup>−11</sup> M. The sensitivity and detection limit do not have axiomatic changes under the presence of high concentrations of interfering ions. The technology offers economic and consumer friendly water quality monitoring options intended for homes, offices and industries.https://www.mdpi.com/1424-8220/19/9/2209field-effect transistors (FETs)ion selective membrane (ISM)extended gate devicesheavy metal ion detectionmercury |
| spellingShingle | Revathi Sukesan Yi-Ting Chen Suman Shahim Shin-Li Wang Indu Sarangadharan Yu-Lin Wang Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device Sensors field-effect transistors (FETs) ion selective membrane (ISM) extended gate devices heavy metal ion detection mercury |
| title | Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device |
| title_full | Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device |
| title_fullStr | Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device |
| title_full_unstemmed | Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device |
| title_short | Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device |
| title_sort | instant mercury ion detection in industrial waste water with a microchip using extended gate field effect transistors and a portable device |
| topic | field-effect transistors (FETs) ion selective membrane (ISM) extended gate devices heavy metal ion detection mercury |
| url | https://www.mdpi.com/1424-8220/19/9/2209 |
| work_keys_str_mv | AT revathisukesan instantmercuryiondetectioninindustrialwastewaterwithamicrochipusingextendedgatefieldeffecttransistorsandaportabledevice AT yitingchen instantmercuryiondetectioninindustrialwastewaterwithamicrochipusingextendedgatefieldeffecttransistorsandaportabledevice AT sumanshahim instantmercuryiondetectioninindustrialwastewaterwithamicrochipusingextendedgatefieldeffecttransistorsandaportabledevice AT shinliwang instantmercuryiondetectioninindustrialwastewaterwithamicrochipusingextendedgatefieldeffecttransistorsandaportabledevice AT indusarangadharan instantmercuryiondetectioninindustrialwastewaterwithamicrochipusingextendedgatefieldeffecttransistorsandaportabledevice AT yulinwang instantmercuryiondetectioninindustrialwastewaterwithamicrochipusingextendedgatefieldeffecttransistorsandaportabledevice |