Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and Memory
Abstract This letter presents dual functions including selector and memory switching in a V/SiO x /AlO y /p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to th...
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2018-08-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2660-9 |
| _version_ | 1797711156084736000 |
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| author | Sungjun Kim Chih-Yang Lin Min-Hwi Kim Tae-Hyeon Kim Hyungjin Kim Ying-Chen Chen Yao-Feng Chang Byung-Gook Park |
| author_facet | Sungjun Kim Chih-Yang Lin Min-Hwi Kim Tae-Hyeon Kim Hyungjin Kim Ying-Chen Chen Yao-Feng Chang Byung-Gook Park |
| author_sort | Sungjun Kim |
| collection | DOAJ |
| description | Abstract This letter presents dual functions including selector and memory switching in a V/SiO x /AlO y /p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-electrode side of the oxygen form the VO x layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 μA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiO y layer. 1.5-nm-thick AlO y layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use. |
| first_indexed | 2024-03-12T07:02:55Z |
| format | Article |
| id | doaj.art-29b765da25f24417a6a2a4c8125a7f08 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:02:55Z |
| publishDate | 2018-08-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-29b765da25f24417a6a2a4c8125a7f082023-09-02T23:36:15ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-08-011311710.1186/s11671-018-2660-9Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and MemorySungjun Kim0Chih-Yang Lin1Min-Hwi Kim2Tae-Hyeon Kim3Hyungjin Kim4Ying-Chen Chen5Yao-Feng Chang6Byung-Gook Park7School of Electronics Engineering, Chungbuk National UniversityDepartment of Physics, National Sun Yat-sen UniversityDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National UniversityDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National UniversityDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National UniversityDepartment of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at AustinIntel CorporationDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National UniversityAbstract This letter presents dual functions including selector and memory switching in a V/SiO x /AlO y /p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-electrode side of the oxygen form the VO x layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 μA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiO y layer. 1.5-nm-thick AlO y layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use.http://link.springer.com/article/10.1186/s11671-018-2660-9Resistive switchingSelectorMemoryNonlinearitySilicon oxideVanadium |
| spellingShingle | Sungjun Kim Chih-Yang Lin Min-Hwi Kim Tae-Hyeon Kim Hyungjin Kim Ying-Chen Chen Yao-Feng Chang Byung-Gook Park Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and Memory Nanoscale Research Letters Resistive switching Selector Memory Nonlinearity Silicon oxide Vanadium |
| title | Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and Memory |
| title_full | Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and Memory |
| title_fullStr | Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and Memory |
| title_full_unstemmed | Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and Memory |
| title_short | Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and Memory |
| title_sort | dual functions of v sio x alo y p si device as selector and memory |
| topic | Resistive switching Selector Memory Nonlinearity Silicon oxide Vanadium |
| url | http://link.springer.com/article/10.1186/s11671-018-2660-9 |
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