Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size

Nanoindentation morphologies of crystalline copper have been probed at the grain scale. Experimental tests have been conducted on nanocrystalline (NC), ultrafine-grained (UFG), and coarse-grained (CG) copper samples with a new Berkvoich indenter at the strain rate of 0.04/s without holding time at a...

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Main Authors: Jiangjiang Hu, Yusheng Zhang, Weiming Sun, Taihua Zhang
Format: Article
Language:English
Published: MDPI AG 2017-12-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/8/1/9
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author Jiangjiang Hu
Yusheng Zhang
Weiming Sun
Taihua Zhang
author_facet Jiangjiang Hu
Yusheng Zhang
Weiming Sun
Taihua Zhang
author_sort Jiangjiang Hu
collection DOAJ
description Nanoindentation morphologies of crystalline copper have been probed at the grain scale. Experimental tests have been conducted on nanocrystalline (NC), ultrafine-grained (UFG), and coarse-grained (CG) copper samples with a new Berkvoich indenter at the strain rate of 0.04/s without holding time at an indentation depth of 2000 nm at room temperature. As the grain size increases, the height of the pile-up around the residual indentation increases and then exhibits a slightly decrease in the CG Cu. The maximum of the pile-up in the CG Cu obviously deviates from the center of the indenter sides. Our analysis has revealed that the dislocation motion and GB activities in the NC Cu, some cross- and multiple-slip dislocations inside the larger grain in the UFG Cu, and forest dislocations from the intragranular Frank-Read sources in the CG Cu would directly induce this distinct pile-up effect.
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spelling doaj.art-29d3bad433ca4e66b15f35afebc8f35d2022-12-22T04:22:52ZengMDPI AGCrystals2073-43522017-12-0181910.3390/cryst8010009cryst8010009Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain SizeJiangjiang Hu0Yusheng Zhang1Weiming Sun2Taihua Zhang3College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, ChinaAdvanced Materials Research Center, Northwest Institute for Non-Ferrous Metal Research, Xi’an 710016, ChinaKey Laboratory of Automobile Materials, College of Materials Science and Engineering Jilin University, Nanling Campus, Changchun 130025, ChinaCollege of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, ChinaNanoindentation morphologies of crystalline copper have been probed at the grain scale. Experimental tests have been conducted on nanocrystalline (NC), ultrafine-grained (UFG), and coarse-grained (CG) copper samples with a new Berkvoich indenter at the strain rate of 0.04/s without holding time at an indentation depth of 2000 nm at room temperature. As the grain size increases, the height of the pile-up around the residual indentation increases and then exhibits a slightly decrease in the CG Cu. The maximum of the pile-up in the CG Cu obviously deviates from the center of the indenter sides. Our analysis has revealed that the dislocation motion and GB activities in the NC Cu, some cross- and multiple-slip dislocations inside the larger grain in the UFG Cu, and forest dislocations from the intragranular Frank-Read sources in the CG Cu would directly induce this distinct pile-up effect.https://www.mdpi.com/2073-4352/8/1/9nanoindentationpile-up effectgrain sizedislocation motiongrain boundary activities
spellingShingle Jiangjiang Hu
Yusheng Zhang
Weiming Sun
Taihua Zhang
Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size
Crystals
nanoindentation
pile-up effect
grain size
dislocation motion
grain boundary activities
title Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size
title_full Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size
title_fullStr Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size
title_full_unstemmed Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size
title_short Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size
title_sort nanoindentation induced pile up in the residual impression of crystalline cu with different grain size
topic nanoindentation
pile-up effect
grain size
dislocation motion
grain boundary activities
url https://www.mdpi.com/2073-4352/8/1/9
work_keys_str_mv AT jiangjianghu nanoindentationinducedpileupintheresidualimpressionofcrystallinecuwithdifferentgrainsize
AT yushengzhang nanoindentationinducedpileupintheresidualimpressionofcrystallinecuwithdifferentgrainsize
AT weimingsun nanoindentationinducedpileupintheresidualimpressionofcrystallinecuwithdifferentgrainsize
AT taihuazhang nanoindentationinducedpileupintheresidualimpressionofcrystallinecuwithdifferentgrainsize